Influence of surface morphology on electrophysical properties of PbTe: Sb films

The electrophysical properties of polycrystalline doped semiconductor thin films PbTe: Sb deposited on mica and sital (glass based ceramic) substrates are considered. The thickness dependencies of carrier mobility, of Hall coefficient and of Seebeck coefficient, and the correlations between these parameters for films deposited on different substrate materials were studied. The peculiarities of growth of thin films and their structural parameters are analyzed taking into account the features of the ‘substrate – film’ boundary section.

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Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.488-489.76 ◽

2012 ◽

Vol 488-489 ◽

pp. 76-81 ◽

Cited By ~ 2

Author(s):

Subramani Shanmugan ◽

Mutharasu Devarajan ◽

Kamarulazizi Ibrahim

Keyword(s):

Thin Films ◽

Chemical Composition ◽

Surface Morphology ◽

Shape Analysis ◽

Structural Parameters ◽

X Ray Diffraction ◽

X Ray ◽

Electrical Studies ◽

Sb Doping ◽

Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

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Dynamic processes in transient phases during self-assembly of organic semiconductor thin films

Molecular Systems Design & Engineering ◽

10.1039/d1me00078k ◽

2021 ◽

Author(s):

Jing Wan ◽

Yang Li ◽

Jared Benson ◽

Richards Miller ◽

Mikhail Zhernenkov ◽

...

Keyword(s):

Thin Films ◽

Small Molecules ◽

Organic Semiconductor ◽

Self Assembly ◽

Carrier Mobility ◽

Electronic Devices ◽

Dynamic Processes ◽

Semiconductor Thin Films ◽

Solution Proceeds ◽

Transient Phases

Crystallization of organic semiconductor small molecules from solution proceeds in multiple steps. This study describes how asymmetric molecules lead to long-lived transient phases and their impact on carrier mobility for electronic devices.

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Thermoelectric properties of PbTe thin films prepared by gas evaporation method

Journal of Materials Research ◽

10.1557/jmr.1999.0031 ◽

1999 ◽

Vol 14 (1) ◽

pp. 209-212 ◽

Cited By ~ 35

Author(s):

Masatoshi Ito ◽

Won-Son Seo ◽

Kunihito Koumoto

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Grain Size ◽

Seebeck Coefficient ◽

Grain Boundaries ◽

Carrier Concentration ◽

Thermoelectric Properties ◽

Carrier Mobility ◽

Evaporation Method

PbTe thin films with fine grains were successfully fabricated by the gas evaporation method. Thermoelectric properties, i.e., Seebeck coefficient and electrical conductivity, both decreased with decreasing grain size. This was attributed to the decrease in carrier mobility exceeding the increase in carrier concentration with decreasing grain size. It was clarified that the effects of grain boundaries and of oxidation on carrier mobility are considerably large.

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Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo13.01.061 ◽

2009 ◽

Vol 13 (1) ◽

pp. 061-064 ◽

Cited By ~ 2

Author(s):

V. I. Bilozertseva ◽

Keyword(s):

Thin Films ◽

Electrophysical Properties ◽

Semiconductor Thin Films ◽

Technology Structure

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OPTICAL AND MORPHOLOGICAL CHARACTERIZATION OF (ZnO)x(CdO)1-x THIN FILMS

Modern Physics Letters B ◽

10.1142/s0217984901002245 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 663-666

Author(s):

L. VAILLANT ◽

O. VIGIL ◽

G. CONTRERAS-PUENTE ◽

C. MEJÍA-GARCÍA

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Surface Morphology ◽

Morphological Characterization ◽

Morphological Properties ◽

Optical Technique ◽

Semiconductor Thin Films ◽

Scanning Electron

The optical and morphological properties of (ZnO)x(CdO)1-x semiconductor thin films with x composition in the range 0 □ x □ 0.5 are studied by the photoluminescence optical technique (PL), and the Scanning Electron Microscopy (SEM). The evolution of the band associated with oxygen content in the films is observed and described as a function of the film composition and the thermal annealing. The surface morphology is presented, where two different binary semiconducting species can be discerned in proportions dependent on the films composition.

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Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-720-h2.4 ◽

2002 ◽

Vol 720 ◽

Author(s):

Costas G. Fountzoulas ◽

Daniel M. Potrepka ◽

Steven C. Tidrow

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Electrical Characterization ◽

Field Variable ◽

Laser Deposition ◽

X Ray Diffraction ◽

Ceramic Substrates ◽

Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

10.26434/chemrxiv.6223610.v1 ◽

2018 ◽

Author(s):

Weikun Zhu ◽

Erfan Mohammadi ◽

Ying Diao

Keyword(s):

Thin Film ◽

Thin Films ◽

Image Analysis ◽

Fractal Dimension ◽

Organic Semiconductors ◽

Film Growth ◽

Electronic Device ◽

Significant Control ◽

Semiconductor Thin Films ◽

Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

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Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

Nanoscale Reports ◽

10.26524/nr1813 ◽

2018 ◽

Vol 1 (1) ◽

pp. 21-25

Author(s):

R Revathi ◽

R Karunathan

Keyword(s):

Thin Films ◽

Negative Temperature Coefficient ◽

Thermal Evaporation ◽

Structural Parameters ◽

Negative Temperature ◽

Resistivity Measurements ◽

Allowed Transition ◽

Evaporation Technique ◽

Indium Telluride ◽

Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

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