scholarly journals The Role of Annealing Temperature in Photocatalytic Performance of Fe3O4/SnO2 nanocomposites

2017 ◽  
Vol 196 ◽  
pp. 012032 ◽  
Author(s):  
Valentinus Paramarta ◽  
Ardiansyah Taufik ◽  
Rosari Saleh
Keyword(s):  
Photocatalytic Performance ◽  
Annealing Temperature

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

Exploring the role of electron-hole scavengers on optimizing the photocatalytic performance of BiVO4

2018 ◽  
Vol 5 (10) ◽  
pp. 21703-21709 ◽  
Author(s):  
Mohamad Fakhrul Ridhwan Samsudin ◽  
Lim Tau Siang ◽  
Suriati Sufian ◽  
Robabeh Bashiri ◽  
Norani Muti Mohamed ◽  
...  
Keyword(s):  
Photocatalytic Performance ◽  
Electron Hole
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