Transport Coefficients of Ar/C/H/O/N Systems Thermal Plasma at Atmospheric Pressure

Author(s):  
A Sanon ◽  
J M Baronnet
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.


2012 ◽  
Vol 2012 (0) ◽  
pp. 437-438
Author(s):  
Ryuta Ichiki ◽  
Hirokazu Nagamatsu ◽  
Takashi Inoue ◽  
Masashi Yoshida ◽  
Shuichi Akamine ◽  
...  

2004 ◽  
Vol 37 (8) ◽  
pp. 1206-1213 ◽  
Author(s):  
R Benocci ◽  
P Esena ◽  
A Galassi ◽  
M Piselli ◽  
M Sciascia

2021 ◽  
pp. 223-251
Author(s):  
Mahreen ◽  
Priyanka Prasad ◽  
Satyananda Kar ◽  
Jatindra K. Sahu

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