scholarly journals Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

2015 ◽  
Vol 73 ◽  
pp. 012100
Author(s):  
R Vijaya Shanthi ◽  
K Jayakumar ◽  
P Nithiananthi
Keyword(s):  
Binding Energy ◽  
Quantum Wire ◽  
Donor Binding Energy ◽  
X Band ◽  
Band Mixing

Effect of geometry on the pressure induced donor binding energy in semiconductor nanostructures

2015 ◽  
Vol 04 (03) ◽  
pp. 1550018
Author(s):  
P. Kalpana ◽  
K. Jayakumar ◽  
P. Nithiananthi
Keyword(s):  
Binding Energy ◽  
External Pressure ◽  
Semiconductor Nanostructures ◽  
Mass Approximation ◽  
Hydrogenic Donor Impurity ◽  
Donor Binding Energy ◽  
X Band ◽  
Hydrogenic Donor ◽  
Band Mixing ◽  
Geometrical Effects

The effect of geometry on an on-center hydrogenic donor impurity in a GaAs /( Ga,Al ) As quantum wire (QWW) and quantum dot (QD) under the influence of Γ–X band mixing due to an applied hydrostatic pressure is theoretically studied. Numerical calculations are performed in an effective mass approximation. The ground state impurity energy is obtained by variational procedure. Both the effects of pressure and geometry are to exert an additional confinement on the impurity inside the wire as well as dot. We found that the donor binding energy is modified by the geometrical effects as well as by the confining potential when it is subjected to external pressure. The results are presented and discussed.

Variational Calculations of Donor Binding Energy in Rectangular Wurtzite Aluminium Gallium Nitride / Gallium Nitride Quantum Wires

2007 ◽  
Vol 1040 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Gallium Nitride ◽  
Binding Energy ◽  
Electric Fields ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Potential Profile ◽  
Nitride Semiconductors ◽  
Aluminium Gallium Nitride ◽  
Donor Binding Energy ◽  
Variational Calculations

AbstractWe present variational calculations of donor binding energy in rectangular wurtzite aluminium gallium nitride / gallium nitride quantum wires. We explicitly take into account the effect of spontaneous and piezoelectric polarization on the energy levels of donors in quantum wires. Wurtzite structure nitride semiconductors have spontaneous polarization even in the absence of externally applied electric fields. They also have large piezoelectric polarization when grown as pseudomorphic layers. The magnitude of both polarization components is of the order of 1013 electrons per cm2, and has a non-trivial effect on the potential profile seen by electrons. Due to the large built-in electric fields resulting from the polarization discontinuities at heterojunctions, the binding energies of donors is a strong function of the position inside the quantum wire. The potential profile in the 0001 direction can vary by as much as 1.5eV due to polarization effects for vertical dimensions of the quantum wire up to 20 angstroms. The probability density of electrons tends to concentrate near the minimum of the conduction band profile in the 0001 direction. Donors located close to this minimum tend to have a larger concentration of electron density compared to those located closer to the maximum. As a consequence, the binding energy of the former are higher compared to the latter. We use Lorentzian variational wavefunctions to calculate the binding energy as a function of donor position. The confinement potential enhances the binding by a factor of about 3 compared to donors in bulk nitride semiconductors, from about 30 meV to about 90 meV. The variation of binding energy with position is calculated to be more than 50% for typical compositions of the quantum wire regions. Our calculations will be useful for understanding device applications involving n-type doped nitride semiconductor quantum wires.

scholarly journals Positive and Negative Donor Impurity in an InAs/AlAs Quantum Wire

2010 ◽  
Vol 2 (3) ◽  
pp. 433
Author(s):  
N. Arunachalam ◽  
A. J. Peter
Keyword(s):  
Binding Energy ◽  
Quantum Wire ◽  
Optical Transition ◽  
Binding Energies ◽  
Impurity Level ◽  
Wire Radius ◽  
Emission Energy ◽  
Interband Optical Transition ◽  
Mass Approximation ◽  
Charged Donor

Binding energies of positive and negative charged donor impurities in an InAs/AlAs cylindrical quantum wire are investigated. Numerical calculations are performed using the variational procedure within the single band effective mass approximation. We assume that the impurity is located at the axis of the wire. The interband optical transition with and without the exciton is computed as a function of wire radius. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Neutral shallow donors comprise a positively charged donor and a single bound electron. It is observed that (i) negative trions have a higher binding energy than positive trions, (ii) the binding energy of the heavy-hole exciton is much larger than that of the light-hole exciton due to different hole mass values (iii) the exciton binding energy and the interband emission energy are both increased when the radius of the cylindrical quantum wire is decreased and (iv) the effect of exciton influences the interband emission energy. Our results are in good agreement with the recent published results. Keywords: Quantum wire; Impurity level; Binding energy; Excitons. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i3.4715                 J. Sci. Res. 2 (3), 433-441 (2010)  

Influence of Al Composition on Donor Impurity States in Self-Formed GaAs-AlxGa1-xAs Quantum Rings

2013 ◽  
Vol 380-384 ◽  
pp. 4284-4289
Author(s):  
Guang Xin Wang ◽  
Xiu Zhi Duan
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Growth Direction ◽  
Uniform Electric Field ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Rings ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Special Value

Based on the the effective mass approximation and variational approach, the donor impurity states confined in self-formed GaAs/AlxGa1-xAs quantum rings (QRs) are investigated theoretically. A uniform electric field is applied along the growth direction of the QR. The different effective masses in the different regions of the GaAs/AlxGa1-xAs QR are taken into consideration. Numerical results show that the binding energy of a donor impurity increases gradually, reaches a maximum value, and then decreases quickly to the special value as the QR height decreases. Given a fixed QR size, the binding energy increases for the impurity located at the center of the QR when the Al composition increases. In addition, it can also be found that when the applied electric field strength increases, the donor binding energy increases for impurities localized at the negative z axis of the QR; however, the donor binding energy decreases slightly for impurities located at the center and positive z axis of the QR.

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