Effect of ZrO2 on the sintering behavior, strength and high-frequency dielectric properties of electrical ceramic porcelain insulator

2018 ◽  
Vol 5 (1) ◽  
pp. 015202 ◽  
Author(s):  
Niraj Singh Mehta ◽  
Praveen Kumar Sahu ◽  
Md Ershad ◽  
Vipul Saxena ◽  
Ram Pyare ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
High Frequency ◽  
Sintering Behavior ◽  
Porcelain Insulator ◽  
Electrical Ceramic ◽  
Behavior Strength

scholarly journals Sintering, Microstructure, and Dielectric Properties of Copper Borates for High Frequency LTCC Applications

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4017
Author(s):  
Dorota Szwagierczak ◽  
Beata Synkiewicz-Musialska ◽  
Jan Kulawik ◽  
Norbert Pałka
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
High Frequency ◽  
Ceramic Materials ◽  
Sintering Behavior ◽  
Terahertz Time Domain Spectroscopy ◽  
Very High Frequency ◽  
X Ray ◽  
Low Dielectric ◽  
Very High

New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications.

An impregnation-reduction method to prepare graphite nanosheet/alumina composites and its high-frequency dielectric properties

Rare Metals ◽  
2015 ◽  
Vol 36 (3) ◽  
pp. 205-208 ◽  
Author(s):  
Ke-Lan Yan ◽  
Run-Hua Fan ◽  
Min Chen ◽  
Kai Sun ◽  
Xu-Ai Wang ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
High Frequency ◽  
Reduction Method ◽  
Graphite Nanosheet ◽  
Alumina Composites

LOW-TEMPERATURE ION-PLASMA DEPOSITION TECHNOLOGY OF NANOSTRUCTURED FILMS OF ALUMINUM AND BORON NITRIDES

2021 ◽  
Vol 56 ◽  
pp. 97-107
Author(s):  
M. S. Zayats ◽  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
High Frequency ◽  
Plasma Deposition ◽  
Heating Temperature ◽  
Substrate Heating ◽  
Ion Plasma ◽  
Technological Cycle ◽  
Physical And Chemical

A low-temperature (substrate heating temperature up to 400 °C) ion-plasma technology for the formation of nanostructured AlN and BN films by the method of high-frequency reactive magnetron sputtering of the corresponding targets has been developed (the modernized installation "Cathode-1M"), which has in its technological cycle the means of physical and chemical modification, which allow to purposefully control the phase composition, surface morphology, size and texture of nanocrystalline films. The possibility of using the method of high-frequency magnetron sputtering for deposition of transparent hexagonal BN films in the nanoscale state on quartz and silicon substrates is shown. Atomic force microscopy (AFM) has shown that AlN films can have an amorphous or polycrystalline surface with grain sizes of approximately 20-100 nm, with the height of the nanoparticles varying from 3 to 10 nm and the degree of surface roughness from 1 to 10 nm. It was found that the dielectric penetration of polycrystalline AlN films decreases from 10 to 3.5 at increased frequencies from 25 Hz to 1 MHz, and the peak tangent of the dielectric loss angle reaches 0.2 at 10 kHz. Such features indicate the existence of spontaneous polarization of dipoles in the obtained AlN films. Interest in dielectric properties in AlN / Si structures it is also due to the fact that there are point defects, such as nitrogen vacancies and silicon atoms, which diffuse from the silicon substrate during synthesis and play an important role in the dielectric properties of AlN during the formation of dipoles. The technology makes it possible, in a single technological cycle, to produce multilayer structures modified for specific functional tasks with specified characteristics necessary for the manufacture of modern electronics, optoelectronics and sensorics devices. It should also be noted that the technology of magnetron sputtering (installation "Cathode-1M") is highly productive, energetically efficient and environmentally friendly in comparison with other known technologies for creating semiconductor structures and allows them to be obtained with minimal changes in the technological cycle.

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