Investigation of optoelectronic characteristics of indium composition in InGaN-based light-emitting diodes

2019 ◽  
Vol 6 (4) ◽  
pp. 045909 ◽  
Author(s):  
Muhammad Usman ◽  
Urooj Mushtaq ◽  
Dong-Guang Zheng ◽  
Dong-Pyo Han ◽  
Nazeer Muhammad
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Indium Composition

Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

2014 ◽  
Vol 331 ◽  
pp. 282-286 ◽  
Author(s):  
Ho Young Chung ◽  
Kie Young Woo ◽  
Su Jin Kim ◽  
Tae Geun Kim
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Indium Composition

Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

2008 ◽  
Vol 47 (10) ◽  
pp. 7854-7856 ◽  
Author(s):  
Natalie Fellows ◽  
Hitoshi Sato ◽  
Hisashi Masui ◽  
Steven P. DenBaars ◽  
Shuji Nakamura
Keyword(s):  
Light Emitting Diodes ◽  
Polarization Ratio ◽  
Light Emitting ◽  
Indium Composition

Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition

2011 ◽  
Vol 306-307 ◽  
pp. 1133-1137
Author(s):  
Ting Wei Kuo ◽  
Ling Min Kong ◽  
Zhe Chuan Feng ◽  
Wei Liu ◽  
Soo Jin Chua ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Indium Composition

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), were studied by time-resolved photoluminescence (TRPL) spectroscopic technique. Samples involved have similar basic structures of three QWs but different well-composition and barrier/well dimensions. TRPL results show that PL intensity and decay time increase with the number of QWs and the indium composition. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN MQW LED, with controlled the indium composition and QW numbers.

scholarly journals Erratum: “Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”

2009 ◽  
Vol 48 (4) ◽  
pp. 049201 ◽  
Author(s):  
Natalie Fellows ◽  
Hitoshi Sato ◽  
Hisashi Masui ◽  
Steven P. DenBaars ◽  
Shuji Nakamura
Keyword(s):  
Light Emitting Diodes ◽  
Polarization Ratio ◽  
Light Emitting ◽  
Indium Composition
Sign in / Sign up

Export Citation Format

Share Document