scholarly journals Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

2020 ◽  
Vol 2 (2) ◽  
pp. 025003
Author(s):  
Agnieszka Gocalinska ◽  
Andrea Pescaglini ◽  
Eleonora Secco ◽  
Enrica E Mura ◽  
Kevin Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
High Mobility ◽  
Vapour Phase ◽  
Polycrystalline Materials ◽  
Next Generation ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Amorphous Substrates ◽  
P Type

Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

2011 ◽  
Vol 99 (6) ◽  
pp. 062113 ◽  
Author(s):  
V. Gorge ◽  
Z. Djebbour ◽  
A. Migan-Dubois ◽  
C. Pareige ◽  
C. Longeaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Vapour Phase ◽  
Crystal Quality ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy

2002 ◽  
Vol 192 (2) ◽  
pp. 453-455 ◽  
Author(s):  
S. Yamaguchi ◽  
Y. Iwamura ◽  
Y. Watanabe ◽  
M. Kosaki ◽  
Y. Yukawa ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
In Doping ◽  
Metalorganic Vapour Phase Epitaxy ◽  
P Type

scholarly journals High Hole Mobility Polycrystalline GaSb Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1348
Author(s):  
Anya Curran ◽  
Farzan Gity ◽  
Agnieszka Gocalinska ◽  
Enrica Mura ◽  
Roger E. Nagle ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Gallium Antimonide ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Limited Mobility ◽  
Gasb Layer ◽  
P Type

In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is p-type, with a hole concentration in the range of 2 × 1016 to 2 × 1017 cm−3. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO2 in the range of 9–66 cm2/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm2/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO2 has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO2 displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in p-channel devices than for implementation in ICs.

Growth of MgTe and Zn1−xMgxTe thin films by metalorganic vapour phase epitaxy

1994 ◽  
Vol 138 (1-4) ◽  
pp. 1079-1080 ◽  
Author(s):  
B. Qu'Hen ◽  
X. Quesada ◽  
W.S. Kuhn ◽  
J.E. Bourée ◽  
L. Svob ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy
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