Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.

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Growth of MgTe and Zn1−xMgxTe thin films by metalorganic vapour phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90964-4 ◽

1994 ◽

Vol 138 (1-4) ◽

pp. 1079-1080 ◽

Cited By ~ 7

Author(s):

B. Qu'Hen ◽

X. Quesada ◽

W.S. Kuhn ◽

J.E. Bourée ◽

L. Svob ◽

...

Keyword(s):

Thin Films ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy

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Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171419 ◽

1994 ◽

Vol 52 ◽

pp. 736-737

Author(s):

A. Carlsson ◽

J.-O. Malm ◽

A. Gustafsson

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Quantum Wires ◽

Vapour Phase ◽

Quantitative Information ◽

Lattice Imaging ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy ◽

High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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Towards practical applications of quantum emitters in boron nitride

Scientific Reports ◽

10.1038/s41598-021-93802-8 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

M. Koperski ◽

K. Pakuła ◽

K. Nogajewski ◽

A. K. Dąbrowska ◽

M. Tokarczyk ◽

...

Keyword(s):

Optical Properties ◽

Boron Nitride ◽

Vapour Phase ◽

Emission Characteristics ◽

Vapour Phase Epitaxy ◽

Practical Applications ◽

Metalorganic Vapour Phase Epitaxy ◽

Polydimethylsiloxane Films ◽

Background Luminescence ◽

Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

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