X-ray characterization of CdO thin films grown ona-,c-,r- andm-plane sapphire by metalorganic vapour phase-epitaxy

2005 ◽  
Vol 2 (3) ◽  
pp. 1233-1238 ◽  
Author(s):  
J. Zúñiga-Pérez ◽  
C. Martínez-Tomás ◽  
V. Muñoz-Sanjosé
Keyword(s):  
Thin Films ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Cdo Thin Films

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

2006 ◽  
Vol 3 (6) ◽  
pp. 1687-1690 ◽  
Author(s):  
J. G. Lozano ◽  
D. González ◽  
A. M. Sánchez ◽  
D. Araújo ◽  
S. Ruffenach ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Characterization ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

2011 ◽  
Vol 99 (6) ◽  
pp. 062113 ◽  
Author(s):  
V. Gorge ◽  
Z. Djebbour ◽  
A. Migan-Dubois ◽  
C. Pareige ◽  
C. Longeaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Vapour Phase ◽  
Crystal Quality ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

Characterization of Sub-Surface Structures by Double Crystal X-Ray Diffraction

1986 ◽  
Vol 82 ◽  
Author(s):  
D.K. Bowen ◽  
M.J. Hill ◽  
B.K. Tanner
Keyword(s):  
Vapour Phase ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Glancing Angle ◽  
Graded Layers ◽  
Superlattice Structures

ABSTRACTThe application of double crystal X-ray diffractometry and computer simulation to the characterization of lattice parameter variations through the thickness of heteroepitaxial layers is reviewed. The sensitivity is demonstrated in studies of graded layers grown by vapour phase epitaxy. Capping layers significantly affect rocking curves from superlattice structures. The use of glancing angle diffraction to characterize thin, low period multilayers is examined.

Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)

2004 ◽  
Vol 831 ◽  
Author(s):  
M. B. Charles ◽  
M. J. Kappers ◽  
C. J. Humphreys
Keyword(s):  
Room Temperature ◽  
Crack Formation ◽  
Compressive Strain ◽  
Vapour Phase ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metalorganic Vapour Phase Epitaxy

ABSTRACTThe strain in Al0.80Ga0.20N/GaN distributed Bragg reflectors (DBRs) grown by metalorganic vapour phase epitaxy (MOVPE) on Si(111) was studied using high resolution X-ray diffraction (XRD). Previous studies have shown that a 50nm Al0.80Ga0.20N layer induced a compressive strain in Al0.12Ga0.88N capping layers and prevented crack formation. A seven period Al0.80Ga0.20N/GaN DBR was grown, but this was found to be cracked at room temperature, despite compression in the GaN layers. This problem was solved by growing an identical structure with the addition of a 650nm GaN cap, and due to the compression in this layer, the structure was crack-free.

Optical and X-ray analysis of ZnSxSe1−x/ZnSe superlattices grown on GaAs by metalorganic vapour phase epitaxy

1994 ◽  
Vol 138 (1-4) ◽  
pp. 612-618 ◽  
Author(s):  
J. Hermans ◽  
J. Woitok ◽  
W. Schiffers ◽  
J. Geurts ◽  
A. Schneider ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metalorganic Vapour Phase Epitaxy

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

2009 ◽  
Vol 615-617 ◽  
pp. 939-942
Author(s):  
Piotr Caban ◽  
Kinga Kościewicz ◽  
Wlodek Strupiński ◽  
Jan Szmidt ◽  
Karolina Pagowska ◽  
...  
Keyword(s):  
Structural Properties ◽  
Structural Characterization ◽  
Surface Preparation ◽  
Vapour Phase ◽  
Crystal Quality ◽  
Crystallographic Structure ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.

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