Multi-valued charge trapping memory based on amorphous-indium-gallium-zinc oxide thin film transistor with designed Ga
2
O
3
/Al
2
O
3
stack insulator
2015 ◽
Vol 62
(4)
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pp. 1184-1188
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2020 ◽
Vol 41
(6)
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pp. 856-859
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2020 ◽
Vol 30
(34)
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pp. 2003285
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2016 ◽
Vol 213
(7)
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pp. 1873-1877
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2017 ◽
Vol 48
(1)
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pp. 1231-1233
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