Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement

2007 ◽  
Vol E90-C (1) ◽  
pp. 171-178
Author(s):  
H.-t. HSU ◽  
Y.-m. HSIN
Keyword(s):  
Simulation Study ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Confinement ◽  
Buried Layer ◽  
P Type

Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure

1999 ◽  
Vol 564 ◽  
Author(s):  
K. Das ◽  
S. A. Alterovitz
Keyword(s):  
Surface Layer ◽  
Sheet Resistance ◽  
Multilayer Structure ◽  
Ohmic Contacts ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Low Resistance ◽  
Resistance Surface ◽  
Specific Contact ◽  
P Type

AbstractA Cu-based metallization scheme has been studied for establishing low resistance contacts for a Si/SiGe/Si heterojunction bipolar transistor (HBT) structure. As-grown doped layers were further implanted with BF2 and As ions for the p-type base and n-type emitter layers, respectively, in order to produce a low sheet resistance surface layer. Contacts were metallized using an e-beam deposited multilayer structure of Ti/Cu/Ti/Al. Specific contact resistances of the order of 10−7 Ω cm2 or lower were obtained.

3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment

2015 ◽  
Vol 55 (8) ◽  
pp. 1180-1186 ◽  
Author(s):  
Jin-xin Zhang ◽  
Chao-hui He ◽  
Hong-xia Guo ◽  
Du Tang ◽  
Cen Xiong ◽  
...  
Keyword(s):  
Simulation Study ◽  
Extreme Environment ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Single Event ◽  
Single Event Effects

Interactions between implanted Mg and base p‐type dopant (Be,Zn,C) in heterojunction bipolar transistor devices

1992 ◽  
Vol 71 (11) ◽  
pp. 5694-5698 ◽  
Author(s):  
V. Amarger ◽  
C. Dubon‐Chevallier ◽  
Y. Gao ◽  
B. Descouts
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
P Type

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

1990 ◽  
Vol 26 (2) ◽  
pp. 122 ◽  
Author(s):  
J. Akagi ◽  
Y. Kuriyama ◽  
K. Morizuka ◽  
M. Asaka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Decision Circuit
Sign in / Sign up

Export Citation Format

Share Document