3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment

Microelectronics Reliability ◽

10.1016/j.microrel.2015.06.003 ◽

2015 ◽

Vol 55 (8) ◽

pp. 1180-1186 ◽

Author(s):

Jin-xin Zhang ◽

Chao-hui He ◽

Hong-xia Guo ◽

Du Tang ◽

Cen Xiong ◽

...

Keyword(s):

Simulation Study ◽

Extreme Environment ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Single Event Effects

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Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor

Acta Physica Sinica ◽

10.7498/aps.63.248503 ◽

2014 ◽

Vol 63 (24) ◽

pp. 248503

Author(s):

Zhang Jin-Xin ◽

He Chao-Hui ◽

Guo Hong-Xia ◽

Tang Du ◽

Xiong Cen ◽

...

Keyword(s):

Simulation Study ◽

Three Dimensional ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Bias Effect ◽

Single Event Effects ◽

Dimensional Simulation

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Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Chinese Physics B ◽

10.1088/1674-1056/26/8/088502 ◽

2017 ◽

Vol 26 (8) ◽

pp. 088502

Author(s):

Jin-Xin Zhang ◽

Chao-Hui He ◽

Hong-Xia Guo ◽

Pei Li ◽

Bao-Long Guo ◽

...

Keyword(s):

Three Dimensional ◽

Bipolar Transistor ◽

Fabrication Process ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Single Event Effects ◽

Dimensional Simulation

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3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

Acta Physica Sinica ◽

10.7498/aps.62.048501 ◽

2013 ◽

Vol 62 (4) ◽

pp. 048501

Author(s):

Zhang Jin-Xin ◽

Guo Hong-Xia ◽

Guo Qi ◽

Wen Lin ◽

Cui Jiang-Wei ◽

...

Keyword(s):

Heavy Ion ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

3D Simulation ◽

Charge Collection ◽

Single Event ◽

Single Event Effects ◽

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A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

Chinese Physics B ◽

10.1088/1674-1056/22/5/056103 ◽

2013 ◽

Vol 22 (5) ◽

pp. 056103 ◽

Author(s):

Ya-Bin Sun ◽

Jun Fu ◽

Jun Xu ◽

Yu-Dong Wang ◽

Wei Zhou ◽

...

Keyword(s):

Silicon Germanium ◽

Pulsed Laser ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Single Event Transient

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Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement

IEICE Transactions on Electronics ◽

10.1093/ietele/e90-c.1.171 ◽

2007 ◽

Vol E90-C (1) ◽

pp. 171-178

Author(s):

H.-t. HSU ◽

Y.-m. HSIN

Keyword(s):

Simulation Study ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Confinement ◽

Buried Layer ◽

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Simulation Study of the Single-Event Effects Sensitivity in Nanoscale CMOS for Body-Biasing Circuits

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2014.2308592 ◽

2014 ◽

Vol 14 (2) ◽

pp. 639-644 ◽

Keyword(s):

Simulation Study ◽

Single Event ◽

Single Event Effects ◽

Nanoscale Cmos ◽

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Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Journal of the Korean Physical Society ◽

10.3938/jkps.77.317 ◽

2020 ◽

Vol 77 (4) ◽

pp. 317-322

Author(s):

Tae Ho Park ◽

Jeong Yong Yang ◽

Jiyeon Ma ◽

Geonwook Yoo

Keyword(s):

Electrical Properties ◽

Simulation Study ◽

Single Event ◽

Single Event Effects

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Simulation study of single event effects for split‐gate enhanced power U‐shape metal‐oxide semiconductor field‐effect transistor

IET Power Electronics ◽

10.1049/iet-pel.2013.0633 ◽

2014 ◽

Vol 7 (12) ◽

pp. 2895-2901 ◽

Author(s):

Wang Ying ◽

Cheng‐Hao Yu ◽

Fei Cao ◽

Ming‐Guang Shan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Event ◽

Single Event Effects ◽

Effect Transistor

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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

Chinese Physics B ◽

10.1088/1674-1056/28/7/076106 ◽

2019 ◽

Vol 28 (7) ◽

pp. 076106

Author(s):

Jia-Nan Wei ◽

Chao-Hui He ◽

Pei Li ◽

Yong-Hong Li ◽

Hong-Xia Guo

Keyword(s):

Carrier Lifetime ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Single Event Transient

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Simulation study of single event effects in the SiC LDMOS with a step compound drift region

Microelectronics Reliability ◽

10.1016/j.microrel.2018.09.002 ◽

2018 ◽

Vol 91 ◽

pp. 170-178 ◽

Author(s):

Meng-tian Bao ◽

Ying Wang ◽

Xing-ji Li ◽

Chao-ming Liu ◽

Cheng-hao Yu ◽

...

Keyword(s):

Simulation Study ◽

Drift Region ◽

Single Event ◽

Single Event Effects

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