Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
2014 ◽
Vol 63
(24)
◽
pp. 248503
Zhang Jin-Xin
◽
He Chao-Hui
◽
Guo Hong-Xia
◽
Tang Du
◽
Xiong Cen
◽
...
2017 ◽
Vol 26
(8)
◽
pp. 088502
Jin-Xin Zhang
◽
Chao-Hui He
◽
Hong-Xia Guo
◽
Pei Li
◽
Bao-Long Guo
◽
...
2015 ◽
Vol 55
(8)
◽
pp. 1180-1186
◽
Jin-xin Zhang
◽
Chao-hui He
◽
Hong-xia Guo
◽
Du Tang
◽
Cen Xiong
◽
...
2013 ◽
Vol 62
(4)
◽
pp. 048501
Zhang Jin-Xin
◽
Guo Hong-Xia
◽
Guo Qi
◽
Wen Lin
◽
Cui Jiang-Wei
◽
...
2008 ◽
Vol 55
(4)
◽
pp. 1094-1095
◽
Gianluca Fiori
◽
Giuseppe Iannaccone
◽
Gerhard Klimeck
Y. Suzuki
◽
K. Kusano
◽
K. Nishikawa
Y. Suzuki
◽
T.-H. Watanabe
◽
A. Kageyama
◽
T. Sato
◽
T. Hayashi
2019 ◽
Vol 722
◽
pp. 74-79
◽
Peng-hui Zhao
◽
Yi-zheng Fu
◽
Hai-long Li
◽
Cong-yun Zhang
◽
Ya-qing Liu
Wenliang Yang
◽
Lijun Sun
◽
Tao Zhang
2013 ◽
Vol 22
(5)
◽
pp. 056103
◽
Ya-Bin Sun
◽
Jun Fu
◽
Jun Xu
◽
Yu-Dong Wang
◽
Wei Zhou
◽
...
2007 ◽
Vol E90-C
(1)
◽
pp. 171-178