The chemical potential for a semiconductor

2021 ◽  
pp. 336-345
Author(s):  
Geoffrey Brooker
Keyword(s):  
Fermi Level ◽  
Chemical Potential ◽  
Electron Hole ◽  
Densities Of States ◽  
The Way

“The chemical potential for a semiconductor” deals with the way in which the chemical potential (Fermi level) of a semiconductor is affected: by the densities of states in the bands; by temperature; and by doping. The electron–hole product is usually independent of doping but sensitive to temperature. The chemical potential is worked out numerically for an example case, and is shown to be most sensitive to doping.

scholarly journals Chemical potential and quantum Hall ferromagnetism in bilayer graphene

Science ◽  
2014 ◽  
Vol 345 (6192) ◽  
pp. 58-61 ◽  
Author(s):  
Kayoung Lee ◽  
Babak Fallahazad ◽  
Jiamin Xue ◽  
David C. Dillen ◽  
Kyounghwan Kim ◽  
...  
Keyword(s):  
Degrees Of Freedom ◽  
Chemical Potential ◽  
Hexagonal Boron Nitride ◽  
Quantum Hall ◽  
Bilayer Graphene ◽  
Zero Magnetic Field ◽  
High Magnetic Fields ◽  
Complex Interplay ◽  
Electron Hole ◽  
Quantum Hall State

Bilayer graphene has a distinctive electronic structure influenced by a complex interplay between various degrees of freedom. We probed its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a nonlinear carrier density dependence and bears signatures of electron-electron interactions. The data allowed a direct measurement of the electric field–induced bandgap at zero magnetic field, the orbital Landau level (LL) energies, and the broken-symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors ν = 0 and ν = ±2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.

First-principle study of the structural, mechanical, electronic and thermodynamic properties of intermetallic compounds: Pd3M (M=Sc, Y)

2019 ◽  
Vol 33 (27) ◽  
pp. 1950321
Author(s):  
R. Boulechfar ◽  
A. Trad Khodja ◽  
Y. Khenioui ◽  
H. Meradji ◽  
S. Drablia ◽  
...  
Keyword(s):  
Thermodynamic Properties ◽  
Fermi Level ◽  
Debye Model ◽  
Pressure Effects ◽  
Full Potential ◽  
Generalized Gradient ◽  
Text Structures ◽  
Formation Enthalpies ◽  
Densities Of States ◽  
Experimental Findings

The mechanical, electronic and thermodynamic properties of Pd3M (M[Formula: see text]=[Formula: see text]Sc, Y) compounds have been investigated using the Full Potential Linearized Augmented Plane Wave (FP-LAPW) formalism. The generalized gradient approximation (GGA) is used to treat the exchange–correlation terms. The calculated formation enthalpies and the cohesive energies reveal that the L12 structure is more stable than the D0[Formula: see text] one. The obtained lattice parameters and bulk modulus calculations conform well to the available experimental and theoretical results. The elastic and mechanical properties are analyzed and results show that both compounds are ductile in nature. The Debye temperature and melting temperature are also estimated and are in a good agreement with experimental findings. The total and partial densities of states are determined for L12 and D0[Formula: see text] structures. The density of states at the Fermi level, [Formula: see text]([Formula: see text]), indicates electronic stability for both compounds. The presence of the pseudo-gap near the Fermi level is suggestive of formation of directional covalent bonding. The number of bonding electrons per atom [Formula: see text] and the electronic specific heat coefficient [Formula: see text] are also determined. The quasi-harmonic Debye model has been used to explore the temperature and pressure effects on the thermodynamic properties for both compounds.

Dynamic charge transfer through Fermi level equilibration in the p-CuFe2O4/n-NiAl LDH interface towards photocatalytic application

2020 ◽  
Vol 10 (18) ◽  
pp. 6285-6298 ◽  
Author(s):  
Snehaprava Das ◽  
Sulagna Patnaik ◽  
Kulamani Parida
Keyword(s):  
Photocatalytic Activity ◽  
Charge Transfer ◽  
Energy Level ◽  
Fermi Level ◽  
Vacuum Energy ◽  
Electron Hole ◽  
Photocatalytic Application ◽  
Dynamic Charge ◽  
Hole Recombination

The Ni Al LDH–CuFe2O4 p–n heterojunction, through vacuum energy level bending, inhibits electron hole recombination and enhances photocatalytic activity.

ELECTRONIC STRUCTURES OF NAKED AND MOLECULAR ENCAPSULATED Au NANOPARTICLES

2009 ◽  
Vol 08 (01n02) ◽  
pp. 181-184
Author(s):  
Y. YAMASHITA ◽  
S. HE ◽  
H. YOSHIKAWA ◽  
S. UEDA ◽  
K. KOBAYASHI ◽  
...  
Keyword(s):  
Fermi Level ◽  
Electronic Structures ◽  
Au Nanoparticles ◽  
Present System ◽  
Valence States ◽  
Densities Of States ◽  
Encapsulated Nanoparticles

Naked and molecular encapsulated Au nanoparticles with a diameter of 3 nm were prepared on top of Si in order to elucidate the effect of the molecules on the electronic structures of Au nanoparticles. We have found that the naked particles showed the finite densities of states at the Fermi level while the molecular encapsulated particles exhibited the edge being away from the Fermi level, indicating that the naked and molecular encapsulated Au particles should show metallic and nonmetallic features, respectively. Furthermore, because the naked Au nanoparticles became nonmetallic upon the particles adsorbing the molecules, the highly occupied states of the molecules might be hybridized with the valence states of Au particles, resulting in nonmetallic properties of the molecular encapsulated nanoparticles in the present system.

The Characteristics of Chemisorptions on Si (001) Surface

2015 ◽  
Vol 723 ◽  
pp. 972-975
Author(s):  
Ying Tang Zhang ◽  
Jun Fang Wu
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Energy Curve ◽  
Densities Of States

The characteristics of chemisorptions, such as the pseudogap, forbidden bandwidth, energy curve, the trend of Fermi level in the graphics and the density of states at the Fermi level and so on, were given for the chemisorptions of atom on the Si (001) surface from the density of states. From these densities of states’ curves, the characteristics of chemisorptions were analyzed and compared to for different elements absorption on the Si (001) surface. The density of states for chemisorptions is different for the different elements.

scholarly journals Modeling Fermi Level Effects in Atomistic Simulations

2002 ◽  
Vol 717 ◽  
Author(s):  
Zudian Qin ◽  
Scott T. Dunham
Keyword(s):  
Fermi Level ◽  
Atomistic Simulations ◽  
Electron Hole ◽  
Lattice Monte Carlo ◽  
Coupled Diffusion ◽  
External Point ◽  
Work Variations ◽  
Dopant Atoms ◽  
Charged Point Defect ◽  
Charged Point

AbstractIn this work, variations in electron potential are incorporated into a Kinetic Lattice Monte Carlo (KLMC) simulator and applied to dopant diffusion in silicon. To account for the effect of dopants, the charge redistribution induced by an external point charge immersed in an electron (hole) sea is solved numerically using the quantum perturbation method. The local carrier concentrations are then determined by summing contributions from all ionized dopant atoms and charged point defects, from which the Fermi level of the system is derived by the Boltzmann equation. KLMC simulations with incorporated Fermi level effects are demonstrated for charged point defect concentration as a function of Fermi level, coupled diffusion phenomenon and field effect on doping fluctuations.

scholarly journals Electron-hole asymmetry in the superconductivity of dopedBaFe2As2seen via the rigid chemical-potential shift in photoemission

2011 ◽  
Vol 83 (9) ◽  
Author(s):  
M. Neupane ◽  
P. Richard ◽  
Y.-M. Xu ◽  
K. Nakayama ◽  
T. Sato ◽  
...  
Keyword(s):  
Chemical Potential ◽  
Electron Hole ◽  
Potential Shift

Coulomb resonance at the Fermi level of the electron-hole liquid in germanium

1983 ◽  
Vol 47 (8) ◽  
pp. 655-657 ◽  
Author(s):  
V.M Asnin ◽  
V.I Stepanov ◽  
R Zimmermann ◽  
M Rösler
Keyword(s):  
Fermi Level ◽  
Electron Hole
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