Zeeman effect in the ground multiplet of samarium

The values of gJ for all the levels of the ground term 7 F of samarium have been measured by the method of magnetic resonance in an atomic beam. These are J gJ J gJ 1 1·49840 ± 0·00005 4 1·49625 ± 0·00004 2 1·49779 ± 0·00003 5 1·49533 ± 0·00006 3 1·49707 ± 0·00003 6 1·49419 ± 0·00010 A theoretical calculation of some of the corrections to the Landé g -value is presented. These corrections arise from the breakdown of Russell-Saunders coupling and from rela­tivistic and diamagnetic effects. While the numerical agreement with experiment appears superficially to be good, it is shown, by a consideration of the J -dependence of the theoretical corrections, that certain significant discrepancies remain. A new measurement of gJ for the ground state of europium is also reported and discussed. It is gJ (Eu 8 S 7/2 ) = 1·99340 ± 0·00007.

The hyperfine structure of the ground state 4 f 7 6 s 2 8 S 7/2 of 151 Eu and 153 Eu has been measured by the method of magnetic resonance in an atomic beam. The sign of the hyperfine structure and the value of g J have also been measured. The results are: g J = 1·9935 ± 0·0003; A (151) = -20·0523 ± 0·0002 Mc/s, A (153) = -8·8532 ± 0·0002 Mc/s, B (151) = - 0·7012 ± 0·0035 Mc/s, B (153) = - 1·7852 ± 0·0035 Mc/s; A (151)/ A (153) = 2·26498 ± 0·00008, B (151)/ B (153) = 0·393 + 0·003. These results disagree with the values expected for the pure 8 S 7/2 state formed from a half-filled shell of f -electrons. Calculations on the basis of admixture of higher states of the configuration by spin-orbit coupling account for the discrepancy in g J but do not explain the values of the hyperfine structure constants A and B . Further theoretical work is in progress.


The atomic g J factors of several low-lying states in the ground multiplets of CeI, NdI, SmI, GdI, DyI and ErI have been measured by the atomic beam magnetic resonance technique. Intermediate coupling, relativistic and diamagnetic corrections recently calculated by Judd & Lindgren are shown to give good agreement with the measured g values of Nd, Sm, Dy and Er and we conclude that the ground configurations of Dyi and Eri are 4 f 10 6 s 2 and 4 f 12 6 s 2 respectively. The Gdi results are consistent with fairly pure LS coupling between the 5 d and 4 f electrons and the CeI measurements indicate a strong interaction between the ground state, which is probably 5 d 4 f 6 s 2 , 3 H , and a low-lying state from another configuration such as 5 d 2 4 f 6 s , 5 I .


Measurements have been made in lanthanide nicotinate dihydrate (LnND) single crystals, where Ln ═ Dy and Er, of optical absorption, including the Zeeman effect, of magnetic susceptibility between 1.4 and 4.2 K, of electron paramagnetic resonance between about 9 and 35 GHz, and of magnetic resonance at 22 MHz. As in the case of TmND (Baker et al . 1986 a ), the measurements are consistent with a ground state with a large amplitude of M j ═ ± J , an almost Ising-like g -matrix, and a purely magnetic dipole-dipole interaction between nearest-neighbour Ln 3+ ions. In this respect, the Kramers ions Dy 3+ and Er 3+ exhibit features similar to the non-Kramers ions Tb 3+ and Tm 3+ in the nicotinate dihydrates.


1982 ◽  
Vol 43 (3) ◽  
pp. 509-514 ◽  
Author(s):  
H.T. Duong ◽  
P. Juncar ◽  
S. Liberman ◽  
J. Pinard ◽  
J.L. Vialle ◽  
...  

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.


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