On the structure of tilt grain boundaries in cubic metals. III. Generalizations of the structural study and implications for the properties of grain boundaries

The results of atomistic calculations of long-period tilt boundaries, which were reported in the preceding parts I and II, are generalized and represented concisely by using two-dimensional lattices, called decomposition lattices. The basis vectors of a decomposition lattice characterize the two fundamental structural elements composing all boundaries in a continuous series of boundary structures. Conversely, the governing condition on the basis vectors is that the boundary structure can change continuously throughout the misorientation range between the boundaries represented by the basis vectors. On assuming that no discontinuous changes in boundary structure occur at non-favoured boundary orientations, and that all boundaries considered are stable with respect to faceting, the governing condition may be used to deduce selection rules for adjacent favoured boundaries and the existence of other favoured boundaries in the misorientation range between two given favoured boundaries. The necessary condition for a discontinuous change in boundary structure to be possible at a non-favoured boundary orientation is formulated. Various aspects of intrinsic and extrinsic grain boundary dislocations (g.b.ds) are treated. It is first shown that the observation of intrinsic g.b.d. networks in the transmission electron microscope does not necessarily imply that the reference structure, preserved by those g.b.ds, is a favoured boundary. Secondly, it is argued that extrinsic g.b.ds provide imperfect steps with Burgers vector components parallel to the boundary that do not exist in equilibrium high-angle tilt boundaries. Finally, an explanation of the physical basis of plane matching dislocations is proposed. A general classification of grain boundary properties is introduced that is based on the results of this investigation of grain boundary structure. It is argued that only properties, such as grain boundary diffusion, that depend exclusively on the atomic structure of the boundary core may be used to detect favoured boundaries. Favoured boundaries exist at those misorientations where such a property is continuous but its first derivative, with respect to misorientation, is not. Grain boundary diffusion, the energy against misorientation relation and grain boundary sliding and migration are then discussed.

1998 ◽  
Vol 527 ◽  
Author(s):  
E. Rabkin ◽  
W. Gust

ABSTRACTWe consider the problem of solute diffusion and segregation in the grain boundaries moving during a phase transformation in the framework of Cahn's impurity drag model. The concept of a dynamic segregation factor for the diffusion along moving grain boundaries is introduced. The difference between static and dynamic segregation factors may cause the apparent difference of the triple product of the segregation factor, grain boundary width and grain boundary diffusion coefficient for stationary and moving grain boundaries. The difference between static and dynamic segregation is experimentally verified for the Cu(In)-Bi system, for which the parameters of static segregation are well-known. It is shown that the complications associated with the dynamic segregation may be avoided during the study of the discontinuous ordering reaction. From the kinetics of this reaction, the activation energy of the grain boundary self-diffusion can be determined.


1983 ◽  
Vol 25 ◽  
Author(s):  
E. C. Zingu ◽  
J. W. Mayer

ABSTRACTInterdiffusion in the Si<100>/Pd2Si/Ni and Si<111>/Pd2Si/Ni thin film systems has been investigated using Rutherford backscattering spectrometry. Nickel is found to diffuse along the grain boundaries of polycrystalline Pd2Si upon which it accumulates at the Si<100>Pd2Si interface. The high mobility of Ni compared to that of si suggests that Pd diffuses faster than Si along the Pd2Si grain boundaries. An activation energy of 1.2 eV is determined for Ni grain boundary diffusion in Pd2Si.


2004 ◽  
Vol 821 ◽  
Author(s):  
Markus J. Buehler ◽  
Alexander Hartmaier ◽  
Huajian Gao

AbstractIn a recent study of diffusional creep in polycrystalline thin films deposited on substrates, we have discovered a new class of defects called the grain boundary diffusion wedges (Gao et al., Acta Mat. 47, pp. 2865-2878, 1999). These diffusion wedges are formed by stress driven mass transport between the free surface of the film and the grain boundaries during the process of substrate-constrained grain boundary diffusion. The mathematical modeling involves solution of integro-differential equations representing a strong coupling between elasticity and diffusion. The solution can be decomposed into diffusional eigenmodes reminiscent of crack-like opening displacement along the grain boundary which leads to a singular stress field at the root of the grain boundary. We find that the theoretical analysis successfully explains the difference between the mechanical behaviors of passivated and unpassivated copper films during thermal cycling on a silicon substrate. An important implication of our theoretical analysis is that dislocations with Burgers vector parallel to the interface can be nucleated at the root of the grain boundary. This is a new dislocation mechanism in thin films which contrasts to the well known Mathews-Freund-Nix mechanism of threading dislocation propagation. Recent TEM experiments at the Max Planck Institute for Metals Research have shown that, while threading dislocations dominate in passivated metal films, parallel glide dislocations begin to dominate in unpassivated copper films with thickness below 400 nm. This is consistent with our theoretical predictions. We have developed large scale molecular dynamics simulations of grain boundary diffusion wedges to clarify the nucleation mechanisms of parallel glide in thin films. Such atomic scale simulations of thin film diffusion not only show results which are consistent with both continuum theoretical and experimental studies, but also revealed the atomic processes of dislocation nucleation, climb, glide and storage in grain boundaries. The study should have far reaching implications for modeling deformation and diffusion in micro- and nanostructured materials.


2007 ◽  
Vol 345-346 ◽  
pp. 565-568
Author(s):  
Byung Nam Kim ◽  
Keijiro Hiraga ◽  
Koji Morita ◽  
Hidehiro Yoshida

For steady-state deformation caused by grain-boundary diffusion and viscous grain-boundary sliding, the creep rate of regular polyhedral grains is analyzed by the energy-balance method. For the microstructure, the grain-grain interaction increases the degree of symmetry of diffusional field, resulting in a decrease of the effective diffusion distance. Meanwhile, the viscous grain-boundary sliding is found to decrease the creep rate. The present analysis reveals that the grain-size exponent is dependent on the grain size and the grain-boundary viscosity: the exponent becomes unity for small grain sizes and/or high viscosity, while it is three for large grain sizes and/or low viscosity.


2006 ◽  
Vol 317-318 ◽  
pp. 415-418 ◽  
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Katsuyuki Matsunaga ◽  
Takahisa Yamamoto ◽  
Hajime Haneda ◽  
...  

Grain boundary diffusion coefficients of oxygen (δDgb) at 1793K in high purity α-alumina bicrystals with Σ7{2 _ ,310}/[0001] and Σ31{7 _ ,1140}/[0001] symmetric tilt grain boundaries were measured by means of the isotopic exchange and diffusion depth profiling using SIMS. δDgb of both grain boundaries were determined to be 7.1x10-24 [m3/sec] for Σ7 grain boundary and 5.3 x10-24 [m3/sec] for Σ31 grain boundary, respectively. These results indicate that Σ values do not directly relate to grain boundary diffusion properties.


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