Fast and sensitive nonlinear processes: bistability in CdHgTe

1984 ◽  
Vol 313 (1525) ◽  
pp. 277-284 ◽  
Keyword(s):  
Refractive Index ◽  
Optical Bistability ◽  
Continuous Wave ◽  
Photon Absorption ◽  
Cadmium Mercury Telluride ◽  
Large Intensity ◽  
Mercury Telluride ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Fabry Perot

We discuss the origin and characteristics of the very large intensity-dependent changes in the refractive index of the semiconductor cadmium mercury telluride at 10.6 m. With continuous wave (c.w.) radiation and sample temperatures of 77 K nonlinear Fabry-Perot effects can be observed at powers as low as 1 mW. The Auger dominated recombination process and the thermal contributions to the refractive index make observations of optical bistability difficult with c.w. radiation. However, the use of a pulsed CO 2 laser and two-photon absorption of the radiation does lead to the observation of bistability at room temperature. We compare these results with the reported work on InSb.

Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser

2011 ◽  
Vol 22 (10) ◽  
pp. 1542-1552 ◽  
Author(s):  
Baohua Niu ◽  
Patrick Pardy ◽  
Jerry Fortier ◽  
Mel Ortega ◽  
Travis Eiles
Keyword(s):  
Continuous Wave ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon

scholarly journals The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films

2018 ◽  
Vol 8 (10) ◽  
pp. 1810 ◽  
Author(s):  
Rihan Wu ◽  
Jack Collins ◽  
Leigh Canham ◽  
Andrey Kaplan
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Quantum Confinement ◽  
Nonlinear Refraction ◽  
Photon Absorption ◽  
Third Order ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Silicon Thin Films ◽  
Gaussian Decomposition

We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4- μ m wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n 2 , and the two-photon absorption (TPA) coefficient, β , from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10 − 6 cm 2 /GW and for p-Si is − 9 ± 3 × 10 − 5 cm 2 /GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.

Two-Photon Absorption Laser Assisted Device Alteration Using 1340nm CW Laser: Critical Timing Fault Isolation & Localization for 32nm MPU and Beyond

2010 ◽  
Author(s):  
Baohua Niu ◽  
Pat Pardy ◽  
Joe Davis ◽  
Mel Ortega ◽  
Travis Eiles
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Numerical Aperture ◽  
Fault Isolation ◽  
Photon Absorption ◽  
Solid Immersion Lens ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Critical Timing ◽  
Power Densities

Abstract In this paper, we report on the first observation and study of two-photon absorption (TPA) based laser assisted device alteration (LADA) using a continuous-wave (CW) 1340nm laser. The study was conducted using LADA systems equipped with high numerical aperture (NA) liquid and solid immersion lens objectives on Intel’s 45 nm and 32 nm multiprocessor units (MPU) and test chips. The power densities achievable using these lenses are similar to those reported in the literature for TPA in silicon of CW 1455nm light [1]. We show that the induced photocurrent has a quadratic dependence on the input laser power, a key indicator of two-photon phenomenon. Our results imply that even when using 1340nm wavelength CW lasers, there is a potential for laser invasiveness with the high power densities achievable using high NA objectives. Laser induced damage of the DUT is also a possibility at these high power densities, particularly with the solid immersion lens (SIL). However, we show that the DUT damage threshold can be increased by reducing the DUT’s temperature. Finally, we present results demonstrating a >40% improvement in localization of critical timing faults using TPA based LADA, when compared to traditional 1064nm wavelength (single-photon absorption) LADA.

Dispersion of nonlinear refractive index in layered WS_2 and WSe_2 semiconductor films induced by two-photon absorption

2016 ◽  
Vol 41 (17) ◽  
pp. 3936 ◽  
Author(s):  
Ningning Dong ◽  
Yuanxin Li ◽  
Saifeng Zhang ◽  
Niall McEvoy ◽  
Xiaoyan Zhang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Photon Absorption ◽  
Semiconductor Films ◽  
Two Photon Absorption ◽  
Two Photon
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