scholarly journals Giant flexoelectric effect through interfacial strain relaxation

Author(s):  
Daesu Lee ◽  
Tae Won Noh

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

2010 ◽  
Vol 256 (10) ◽  
pp. 3299-3302 ◽  
Author(s):  
Bo-Ching He ◽  
Hua-Chiang Wen ◽  
Tun-Yuan Chinag ◽  
Zue-Chin Chang ◽  
Derming Lian ◽  
...  

2018 ◽  
Vol 113 (16) ◽  
pp. 162901 ◽  
Author(s):  
Tsukasa Katayama ◽  
Takuya Osakabe ◽  
Shintaro Yasui ◽  
Yosuke Hamasaki ◽  
Badari Narayana Rao ◽  
...  

1991 ◽  
Vol 20 (7) ◽  
pp. 833-837 ◽  
Author(s):  
C. A. Volkert ◽  
E. A. Fitzgerald ◽  
R. Hull ◽  
Y. H. Xie ◽  
Y. J. Mii

2019 ◽  
Vol 114 (23) ◽  
pp. 232902 ◽  
Author(s):  
T. Shiraishi ◽  
S. Choi ◽  
T. Kiguchi ◽  
T. Shimizu ◽  
H. Funakubo ◽  
...  

2011 ◽  
Vol 107 (5) ◽  
Author(s):  
D. Lee ◽  
A. Yoon ◽  
S. Y. Jang ◽  
J.-G. Yoon ◽  
J.-S. Chung ◽  
...  

2012 ◽  
Vol 338 (1) ◽  
pp. 280-282 ◽  
Author(s):  
Y. Yu ◽  
X. Zhang ◽  
J.J. Yang ◽  
J.W. Wang ◽  
Y.G. Zhao

2010 ◽  
Vol 03 (01) ◽  
pp. 83-88 ◽  
Author(s):  
R. NECHACHE ◽  
C. HARNAGEA ◽  
A. RUEDIGER ◽  
F. ROSEI ◽  
A. PIGNOLET

Bi 2 FeCrO 6 thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO 3, ( LaAlO 3)0.3( Sr 2 LaTaO 6)0.7 and SrTiO 3 single crystalline substrates with and without epitaxial CaRuO 3 buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi 2 FeCrO 6 lattice cell. The strain originates from lattice mismatch between CaRuO 3 and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited on LaAlO 3 substrates. The ferroelectric character is demonstrated for all grown BFCO films. The residual in-plane strain weakly affects the effective piezoelectric coefficient of BFCO layers.


2005 ◽  
Vol 875 ◽  
Author(s):  
Kedarnath Kolluri ◽  
Luis A. Zepeda-Ruiz ◽  
Cheruvu S. Murthy ◽  
Dimitrios Maroudas

AbstractStrained semiconductor thin films grown epitaxially on semiconductor substrates of different composition, such as Si1-xGex/Si, are becoming increasingly important in modern microelectronic technologies. In this paper, we report a hierarchical computational approach for analysis of dislocation formation, glide motion, multiplication, and annihilation in Si1-xGex epitaxial thin films on Si substrates. Specifically, a condition is developed for determining the critical film thickness with respect to misfit dislocation generation as a function of overall film composition, film compositional grading, and (compliant) substrate thickness. In addition, the kinetics of strain relaxation in the epitaxial film during growth or thermal annealing (including post-implantation annealing) is analyzed using a properly parameterized dislocation mean-field theoretical model, which describes plastic deformation dynamics due to threading dislocation propagation. The theoretical results for Si1-xGex epitaxial thin films grown on Si (100) substrates are compared with experimental measurements and are used to discuss film growth and thermal processing protocols toward optimizing the mechanical response of the epitaxial film.


Author(s):  
Z.-R. Dai ◽  
Z.L. Wang ◽  
X.F. Duan ◽  
J. Zhang

Epitaxially grown BaTiO3 thin films have potential applications in microelectronics and integrated photonics. The ferroelectric property of this material is largely determined by the domain structure. It is believed that the structure of the substrate would have profound effect on the quality of BaTiO3 epitaxial thin films. This paper reports our studies on the pinning of 90° domain boundaries at interface dislocations.Epitaxial BaTiO3 thin films were deposited on single crystalline LaAIO3 (100) substrates at 800°C by metal-organic chemical vapor deposition (MOCVD). Cross-section specimens of the films were studied at 200 kV using an JEOL 2010 high-resolution transmission electron microscope (HRTEM).


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