Effects of a rotating periodic lattice on coherent quantum states in a ring topology: The case of positive nonlinearity

2021 ◽  
Vol 104 (5) ◽  
Author(s):  
Hongyi Huang ◽  
Kunal K. Das
1995 ◽  
Vol 09 (15) ◽  
pp. 953-961 ◽  
Author(s):  
EMILIO DEL GIUDICE ◽  
ALBERTO GALIMBERTI ◽  
LUCA GAMBERALE ◽  
GIULIANO PREPARATA

In the conceptual framework of Coherent Quantum Electrodynamics we show that the molecules of the liquid phase are described by individual quantum states that differ from those in which the molecules find themselves while in the gas phase. We suggest that tetrahedral coordination emerges from such individual configurations.


2020 ◽  
Vol 29 (14) ◽  
pp. 2042004
Author(s):  
Craig Hogan

It is argued that quantum states of geometry, like those of particles, should be coherent on light cones of any size. An exact classical solution, the gravitational shock wave of a relativistic point particle, is used to estimate gravitational drag from coherent energy flows, and the expected gravitational effect of virtual transverse vacuum energy fluctuations on surfaces of causal diamonds. It is proposed that the appropriately spacetime-averaged gravitational effect of the Standard Model vacuum state leads to the observed small nonzero value of the cosmological constant, dominated by gravitational drag of virtual gluonic strings at the strong interaction scale.


2017 ◽  
Vol 161 ◽  
pp. 01001
Author(s):  
S. Arakelian ◽  
A. Kucherik ◽  
S. Kutrovskaya ◽  
A. Osipov ◽  
A. Istratov ◽  
...  

2006 ◽  
Vol 04 (01) ◽  
pp. 17-43 ◽  
Author(s):  
STEPHEN D. BARTLETT ◽  
TERRY RUDOLPH ◽  
ROBERT W. SPEKKENS

A controversy that has arisen many times over in disparate contexts is whether quantum coherences between eigenstates of certain quantities are fact or fiction. We present a pedagogical introduction to the debate in the form of a hypothetical dialogue between proponents from each of the two camps: a factist and a fictionist. A resolution of the debate can be achieved, we argue, by recognizing that quantum states do not only contain information about the intrinsic properties of a system but about its extrinsic properties as well, that is, about its relation to other systems external to it. Specifically, the coherent quantum state of the factist is the appropriate description of the relation of the system to one reference frame, while the incoherent quantum state of the fictionist is the appropriate description of the relation of the system to another, uncorrelated, reference frame. The two views, we conclude, are alternative but equally valid paradigms of description.


Author(s):  
I. A. Rauf

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.


Author(s):  
Ingemar Bengtsson ◽  
Karol Zyczkowski
Keyword(s):  

1990 ◽  
Vol 51 (8) ◽  
pp. 709-722 ◽  
Author(s):  
H.P. Breuer ◽  
K. Dietz ◽  
M. Holthaus

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