K-Fluorescent-X-Ray Relative-Intensity Measurements

1971 ◽  
Vol 4 (5) ◽  
pp. 1745-1750 ◽  
Author(s):  
J. H. McCrary ◽  
L. V. Singman ◽  
L. H. Ziegler ◽  
L. D. Looney ◽  
C. M. Edmonds ◽  
...  
1972 ◽  
Vol 5 (4) ◽  
pp. 1587-1591 ◽  
Author(s):  
J. H. McCrary ◽  
L. V. Singman ◽  
L. H. Ziegler ◽  
L. D. Looney ◽  
C. M. Edmonds ◽  
...  

1987 ◽  
Vol 2 (4) ◽  
pp. 411 ◽  
Author(s):  
Chander Bhan ◽  
Anita Rani ◽  
S. N. Chaturvedi ◽  
N. Nath

The importance of absolute, as opposed to relative, intensity measurements in X-ray crystal analysis has often been stressed, and such measurements may lead, with compounds where one sort of atom is of dominant importance, to a direct and unequivocal determination of the structure. Their value in the analysis of organic compounds, where usually no atoms are predominant in X-ray scattering power, is perhaps not so immediate; nevertheless, the absolute X-ray reflection of a given substance is at least as important a constant as, say, its thermal conductivity, and its determination is a necessary preliminary to any detailed study by the X-ray method. Hitherto such absolute measurements have been confined to inorganic substances e. g. , rock-salt, usually occurring in large crystals. It seemed to be worth while to make a determination of the absolute reflecting power of a typical organic crystal in conditions similar to those employed in the analysis of such crystals, i. e. , using a small crystal completely bathed in a monochromatic pencil of X-rays. A very suitable substance for such a measurement is anthracene , since it is easily obtained pure and in crystals which are reasonably permanent and simple to adjust, but more particularly because its structure is already known in considerable detain and relative intensity measurements described in this paper will enable workers with other crystals to standardize series of relative intensity measurements with the minimum of labour, by comparing directly one of their observed reflections with the (001) reflection from a small weighed crystal of anthracene. The comparison can be made without difficulty, either photographically using an integrating microphotometer or by the ionization method on an ordinary spectrometer.


Author(s):  
M.D. Ball ◽  
H. Lagace ◽  
M.C. Thornton

The backscattered electron coefficient η for transmission electron microscope specimens depends on both the atomic number Z and the thickness t. Hence for specimens of known atomic number, the thickness can be determined from backscattered electron coefficient measurements. This work describes a simple and convenient method of estimating the thickness and the corrected composition of areas of uncertain atomic number by combining x-ray microanalysis and backscattered electron intensity measurements.The method is best described in terms of the flow chart shown In Figure 1. Having selected a feature of interest, x-ray microanalysis data is recorded and used to estimate the composition. At this stage thickness corrections for absorption and fluorescence are not performed.


1965 ◽  
Vol 23 ◽  
pp. 115-123
Author(s):  
K. G. Widing ◽  
J. R. Porter

Resonance lines of coronal ions of silicon are prominent in the spectral ranges 40–62 Å and 254–356 Å.An unexpected feature of the soft X-ray spectrum is the weakness or absence of the resonance lines of iron in ionization stages XI through XV.A second feature is the prominence of lines of the type (3d → 2p) relative to the resonance transitions (3p → 2s) in Li-like and Beryllium-like spectra. It is suggested that the upper levels (3d) are excited by quadrupole collisions from the ground 2s or 2s2levels.The intensity of the soft X-ray lines relative to the resonance lines in the 300 Å region seems to be more consistent with temperatures well above one million degrees than with temperatures as low as 700000°K, but the data are not adequate for a precise comparison. The relative intensity of the line emission from the various stages of silicon ionization may be interpreted as indicating that the ionization of silicon peaks in stages IX and X.The abundances of C, Mg, S, and Al relative to silicon do not seem to be greatly different from the chromospheric abundances reported by Pottasch or with the photospheric abundances.


1953 ◽  
Vol 24 (10) ◽  
pp. 955-960 ◽  
Author(s):  
E. Alexander ◽  
B. S. Fraenkel ◽  
A. Many ◽  
I. T. Steinberger
Keyword(s):  
X Ray ◽  

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