Resonance strengths for 
KLL
 dielectronic recombination of highly charged mercury ions and improved empirical 
Z
-scaling law

Dielectronic recombination measurements for highly charged ions were performed at the Stockholm refrigerated electron beam ion trap. We have obtained KLL DR resonance strengths for highly charged H- and He-like sulfur and silicon ions. The experimental results are compared with the theoretical data obtained from GRASP II code. Both the experimental and calculated results agree well within the experimental error bars. Moreover, the dielectronic recombination resonance strengths are used to obtain the new scaling parameters by incorporating our results with the previous measurements and to check the behaviour of scaling formula for H- and He-like isoelectronic sequences.

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Contributions of high-n dielectronic satellites to krypton K-shell emission spectra

Canadian Journal of Physics ◽

10.1139/p03-097 ◽

2003 ◽

Vol 81 (10) ◽

pp. 1177-1183 ◽

Cited By ~ 2

Author(s):

G El-Machtoub

Keyword(s):

Spectral Data ◽

Emission Spectra ◽

Dielectronic Recombination ◽

Intensity Factors ◽

Resonance States ◽

X Ray ◽

Intermediate Resonance ◽

Resonance Strengths ◽

Proper Analysis

We report here on the calculation of dielectronic recombination resonance strengths for high-lying K-shell resonance states of He-, Li-, and Be-like krypton ions. For proper analysis of spectral data explicit calculations of satellite intensity factors are carried out for all possible intermediate resonance states with n = 210. Our calculations successfully predict the details of X-ray emission spectra of highly charged krypton ions interacting with electron beams.PACS Nos.: 32.30.Rj, 32.70.Cs, 32.80.Rm, 34.79.+e

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K-shell excitation dielectronic recombination resonance strengths of highly charged He-like to O-like Xe ions

Plasma Science and Technology ◽

10.1088/2058-6272/aac573 ◽

2018 ◽

Vol 20 (7) ◽

pp. 074010

Author(s):

Tianheng XU ◽

Gang XIONG ◽

Jun XIAO ◽

Yang YANG ◽

Roger HUTTON ◽

...

Keyword(s):

Dielectronic Recombination ◽

Resonance Strengths

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Dielectronic Recombination in the Average-Atom Model

International Astronomical Union Colloquium ◽

10.1017/s0252921100107730 ◽

1988 ◽

Vol 102 ◽

pp. 215

Author(s):

R.M. More ◽

G.B. Zimmerman ◽

Z. Zinamon

Keyword(s):

Detailed Balance ◽

Systematic Errors ◽

Dielectronic Recombination ◽

Rate Equations ◽

Strong Correlations ◽

Dense Plasmas ◽

Atom Model ◽

New Feature ◽

Average Atom Model ◽

Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

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