Tuning the Band Alignment and Electronic Properties of ${\rm{GaSe}}/{\rm{Sn}}$
X
$_{2}$ (
X
= ${\rm{S}}$, ${\rm{Se}}$) Two-Dimensional van der Waals Heterojunctions via an Electric Field
The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.
van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.
Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials.
The Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials have been extensively recognized promising candidates for fabricating multi-functional novel devices. In this work, we investigated structural and electronic...
Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices.
It is found that the biaxial strain, electric field and interlayer distance can effectively modulate the electronic structure and magnetic properties of two-dimensional van der Waals heterostructures.
Exploiting two-dimensional room temperature ferromagnetic materials is always a significant and valuable work. However, the actual number of satisfied materials with intrinsic ferromagnetism is very limited. Here, the van der...
Computational insights into structural, electronic and optical characteristics of GeC/C2N van der Waals heterostructures: effects of strain engineering and electric field