Polarization-Resolved Near-Field Spectroscopy of Localized States in 
m
-Plane 
InxGa1−xN/GaN
 Quantum Wells

The paper reviews our recent achievements in developing a multimode scanning near-field optical microscopy (SNOM) technique. The multimode SNOM apparatus allows us to simultaneously measure spatial variations of photoluminescence spectra in the illumination and illumination-collection modes, their transients and sample surface morphology. The potential of this technique has been demonstrated on a polar InGaN epitaxial layer and nonpolar InGaN/GaN quantum wells. SNOM measurements have allowed revealing a number of phenomena, such as the band potential fluctuations and their correlation to the surface morphology, spatial nonuniformity of the radiative and nonradiative lifetimes, as well as the extended band nature of localized states. The combination of different modes enabled measurements of the ambipolar carrier diffusion and its anisotropy.

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Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy

Applied Physics Letters ◽

10.1063/1.1402638 ◽

2001 ◽

Vol 79 (11) ◽

pp. 1611-1613 ◽

Cited By ~ 6

Author(s):

U. Zeimer ◽

F. Bugge ◽

S. Gramlich ◽

V. Smirnitski ◽

M. Weyers ◽

...

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Near Field ◽

Carrier Confinement ◽

Field Spectroscopy

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Narrow high-energy emission lines in high-resolution near-field spectroscopy on GaInN/GaN quantum wells

physica status solidi (c) ◽

10.1002/pssc.200405050 ◽

2004 ◽

Vol 1 (10) ◽

pp. 2520-2523 ◽

Cited By ~ 7

Author(s):

F. Hitzel ◽

G. Klewer ◽

S. Lahmann ◽

U. Rossow ◽

A. Hangleiter

Keyword(s):

High Resolution ◽

Quantum Wells ◽

Near Field ◽

High Energy ◽

Emission Lines ◽

Energy Emission ◽

Field Spectroscopy ◽

High Energy Emission

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Autocorrelation optical near-field spectroscopy of single GaAs quantum wells

Technical Digest. Summaries of papers presented at the Quantum Electronics and Laser Science Conference. Postconference Technical Digest (IEEE Cat. No.01CH37172) ◽

10.1109/qels.2001.961816 ◽

2002 ◽

Author(s):

G. von Freymann ◽

U. Neuberth ◽

M. Wegener

Keyword(s):

Quantum Wells ◽

Near Field ◽

Field Spectroscopy

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Femtosecond near-field spectroscopy of a single GaAs quantum wire

Applied Physics Letters ◽

10.1063/1.125368 ◽

1999 ◽

Vol 75 (22) ◽

pp. 3500-3502 ◽

Cited By ~ 41

Author(s):

T. Guenther ◽

V. Emiliani ◽

F. Intonti ◽

C. Lienau ◽

T. Elsaesser ◽

...

Keyword(s):

Quantum Wire ◽

Near Field ◽

Field Spectroscopy

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Optical properties of extended and localized states in m-plane InGaN quantum wells

Applied Physics Letters ◽

10.1063/1.4794904 ◽

2013 ◽

Vol 102 (10) ◽

pp. 101102 ◽

Cited By ~ 30

Author(s):

S. Marcinkevičius ◽

K. M. Kelchner ◽

S. Nakamura ◽

S. P. DenBaars ◽

J. S. Speck

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Localized States ◽

Ingan Quantum Wells

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Lateral Coupling of Self-Assembled Quantum Dots Studied by Near-Field Spectroscopy

MRS Proceedings ◽

10.1557/proc-571-89 ◽

1999 ◽

Vol 571 ◽

Cited By ~ 1

Author(s):

H.D. Robinson ◽

B.B. Goldberg ◽

J.L. Merz

Keyword(s):

Quantum Dots ◽

Additional Data ◽

High Spatial Resolution ◽

Large Fraction ◽

Near Field ◽

Localized States ◽

Emission Lines ◽

Lateral Coupling ◽

Self Assembled ◽

Density Regime

ABSTRACTLateral coupling between separate quantum dots has been observed in a system of In0.55A10.45As self-assembled quantum dots. The experiment was performed by taking photoluminescence excitation (PLE) spectra in the optical near-field at 4.2 K. The high spatial resolution afforded by the near-field technique allows us to resolve individual dots in a density regime where interactions between neighboring dots become apparent. In the PLE spectra, narrow resonances are observed in the emission lines of individual dots. A large fraction of these resonances occur simultaneously in several emission lines, originating from different quantum dots. This is evidence of interdot scattering of carriers, which additional data show to be mediated by localized states at energies below the wetting layer exciton energy. A very rich phonon spectrum generated by the complicated interfaces between barrier and dot material is also evident in the data.

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