Parameterization of charge transport process with avalanche multiplication in irradiated Si p-i-n structures at T = 1.9 K

The study is devoted to the treatment of in situ radiation tests results for silicon p-i-n detectors of relativistic protons, which showed the two-stage process of charge transport with avalanche multiplication at a temperature of 1.9 K. The goal of the work is to extract the carrier transport parameters from the experimental data obtained by transient current technique. For that, the impact of a spatial nonuniformity of carrier generation by the laser and spreading of the drifting carrier cloud due to diffusion on the current pulse response formation were considered. The mathematical procedure proposed for the current pulse simulation showed a key contribution of avalanche multiplication in the signal formation and allowed direct estimation of the multiplication factor from the experimental pulses. It is found that this factor only slightly depends on the bias voltage, which suggests the electric field inside the detector to be affected by the space-charge-limited current.

An Analysis of Spatial Nonuniformity of the Flow at the Entrance Section of the Axial-Radial Impeller of a Centrifugal Compressor Stage Working on Regulation Modes

The article presents an analysis of the experimental data on testing a centrifugal compressor stage on regulation modes by changing the rotational speed of the rotor and the turning angle of the blades in the inlet guide vane unit. The distribution of the angles of attack at the entrance section of the impeller in relation to the blade height is obtained. It is established that a significant difference in the angles of attack from the plug to the periphery influences the polytropic efficiency of the compressor stage. Recommendations are given on the improvement of the mechanism of regulation by the inlet guide vane unit and on the choice of the optimum diameter for the entrance part of the driving impeller blades.

Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

The paper reviews our recent achievements in developing a multimode scanning near-field optical microscopy (SNOM) technique. The multimode SNOM apparatus allows us to simultaneously measure spatial variations of photoluminescence spectra in the illumination and illumination-collection modes, their transients and sample surface morphology. The potential of this technique has been demonstrated on a polar InGaN epitaxial layer and nonpolar InGaN/GaN quantum wells. SNOM measurements have allowed revealing a number of phenomena, such as the band potential fluctuations and their correlation to the surface morphology, spatial nonuniformity of the radiative and nonradiative lifetimes, as well as the extended band nature of localized states. The combination of different modes enabled measurements of the ambipolar carrier diffusion and its anisotropy.

MODERNIZATION OF RUSSIAN MONO-PRODUCTION TOWNS: STRATEGIC GOALS OF INSTITUTIONAL REFORMS

Economic and social working arrangement in Russia is determined by spatial nonuniformity and underpopulation. The existing mono-towns are quite different and yet there isn’t single methodological foundation or practical way of development their territories. Taking in view their considerable mass and conglomeration of population in them, finding a source of Russian mono-towns modernization is becoming a major factor of macroeconomic dynamics.