Charge transfer statistics and qubit dynamics at the tunneling Fermi-edge singularity

We review some of our recent results on the potential scattering in a weakly interacting one-dimensional(1D) electron gas. The technique we developed is a poor man's renormalization group procedure in the scattered wave basis. This technique can treat the renormalizations of the scattering on the barrier and the scattering between the electrons in a coherent way, and it allows us to find the scattering amplitudes on a localized potential of arbitrary strength for electrons at any energy. The obtained phase shifts are used to study the Fermi-edge singularity in an interacting 1D electron system, where anomalous exponent of the power-law singularity in the vicinity of the edge is found. The transmission coefficient is directly related to the conductance of a 1D channel by the Landauer formula. Simple formulas that describe the conductance at any temperature are derived. In spin-[Formula: see text] systems, the electron–electron backscattering induces renormalizations of the interaction constants, which causes the low-temperature conductance to deviate from the results of the Luttinger liquid theory. In particular, the temperature dependence of the conductance may become nonmonotonic. In the presence of a magnetic field, backscattering gives rise to a peak in the differential conductance at bias equal to the Zeeman splitting.

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Fermi-edge singularity in heavily doped GaAs multiple quantum wells

Physical Review B ◽

10.1103/physrevb.40.12017 ◽

1989 ◽

Vol 40 (17) ◽

pp. 12017-12019 ◽

Cited By ~ 45

Author(s):

H. Kalt ◽

K. Leo ◽

R. Cingolani ◽

K. Ploog

Keyword(s):

Quantum Wells ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Edge Singularity ◽

Fermi Edge ◽

Fermi Edge Singularity ◽

Heavily Doped

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Fermi-edge singularity in the luminescence spectra of II-VI modulation-doping quantum wells

Physical Review B ◽

10.1103/physrevb.55.r7391 ◽

1997 ◽

Vol 55 (12) ◽

pp. R7391-R7393 ◽

Cited By ~ 11

Author(s):

G. Coli' ◽

L. Calcagnile ◽

P. V. Giugno ◽

R. Cingolani ◽

R. Rinaldi ◽

...

Keyword(s):

Quantum Wells ◽

Luminescence Spectra ◽

Modulation Doping ◽

Edge Singularity ◽

Fermi Edge ◽

Fermi Edge Singularity

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Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

MRS Proceedings ◽

10.1557/proc-872-j18.18 ◽

2005 ◽

Vol 872 ◽

Author(s):

K. Gopalakrishna Naik ◽

K.S.R.K. Rao ◽

T. Srinivasan ◽

R. Muralidharan ◽

S. K. Mehta

Keyword(s):

Excitation Power ◽

Anomalous Behavior ◽

Electron Hole ◽

Edge Singularity ◽

Fermi Edge ◽

Fermi Edge Singularity ◽

Pl Intensity ◽

Dimensional Electron Gas ◽

Increasing Temperature ◽

Hole Recombination

AbstractThe temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E11and E21considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5 -10 meV below the E21transition. At 4.2 K, FES appears as a lower energy shoulder to the E21transition. The PL intensity of all the three transitions E11, FES and E21grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E11and E21decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

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