A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

ABSTRACTRaman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

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Calculations Pertaining to Raman Scattering During Laser Annealing of Ion-Implanted Silicon

MRS Proceedings ◽

10.1557/proc-4-67 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 1

Author(s):

R. F. Wood ◽

D. H. Lowndes ◽

G. E. Giles

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Rapid Onset ◽

Simultaneous Occurrence ◽

Raman Signal ◽

Molten Silicon ◽

Time Resolved ◽

Pulsed Laser Annealing ◽

Anti Stokes ◽

Ion Implanted

ABSTRACTCompaan and co-workers have reported the results of time-resolved optical experiments on ion-implanted silicon which they claim prove the melting model of pulsed laser annealing cannot be correct. These results concern the rapid onset of a Raman signal after a heating laser pulse, the simultaneous occurrence of a Raman signal and the high reflectivity phase characteristic of molten silicon, and the lattice temperature measured by the Raman Stokes/anti-Stokes intensity ratio. In this paper, we show by detailed numerical calculations with the melting model that there is, in fact, excellent agreement between the results of the calculations and the experimental results reported by Compaan and co-workers.

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Time-Resolved Study of Silicon During Pulsed-Laser Annealing

MRS Proceedings ◽

10.1557/proc-13-43 ◽

1983 ◽

Vol 13 ◽

Cited By ~ 7

Author(s):

B. C. Larson ◽

C. W. White ◽

T. S. Noggle ◽

J. F. Barhorst ◽

D. M. Mills

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Laser Pulses ◽

High Energy ◽

Temperature Gradients ◽

Time Resolved ◽

Synchrotron Source ◽

Near Surface ◽

Solid Interface ◽

Pulsed Laser Annealing

ABSTRACTNear surface temperatures and temperature gradients have been studied in silicon during pulsed laser annealing. The investigation was carried out using nanosecond resolution x-ray diffraction measurements made at the Cornell High Energy Synchrotron Source. Thermal-induced-strain analyses of these real-time, extended Bragg scattering measurements have shown that the lattice temperature reached the melting point during 15 ns, 1.1–1.5 J/cm2 ruby laser pulses and that the temperature of the liquid-solid interface remained at that temperature throughout the high reflectivity phase, after which time the surface temperature subsided rapidly. The temperature gradients below the liquid-solid interface were found to be in the range of 107°C/cm.

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Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

Applied Physics Letters ◽

10.1063/1.93880 ◽

1983 ◽

Vol 42 (3) ◽

pp. 282-284 ◽

Cited By ~ 62

Author(s):

B. C. Larson ◽

C. W. White ◽

T. S. Noggle ◽

J. F. Barhorst ◽

D. M. Mills

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Temperature Gradients ◽

Diffraction Measurement ◽

X Ray Diffraction ◽

Time Resolved ◽

X Ray ◽

Pulsed Laser Annealing

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Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

MRS Proceedings ◽

10.1557/proc-4-13 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 1

Author(s):

B. C. Larson ◽

C. W. White ◽

T. S. Noggle ◽

J. F. Barhorst ◽

D. Mills

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Temperature Profiles ◽

X Ray Diffraction ◽

Time Resolved ◽

Near Surface ◽

X Ray ◽

Pulsed Laser Annealing ◽

Pulsed Laser Processing ◽

Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

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Raman and Optical Properties of the Pulsed Laser Annealing Phase of SI

MRS Proceedings ◽

10.1557/proc-4-43 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 5

Author(s):

A. Compaan ◽

A. Aydinli ◽

M. C. Lee ◽

H. W. LO

Keyword(s):

Optical Properties ◽

Laser Pulse ◽

Absorption Coefficient ◽

Laser Annealing ◽

Pulsed Laser ◽

Experimental Tests ◽

Small Temperature ◽

Pulsed Laser Annealing ◽

Near Ir ◽

Transmission Measurements

ABSTRACTRaman measurements of temperature reported earlier have been repeated using a doubled Nd: YAG pulse for excitation and an electronically delayed dye laser pulse. These results, together with a variety of experimental tests of the Raman method, confirm the validity of the small temperature rise during pulsed laser annealing. Transmission measurements spanning the visible and near IR show that there exists a thin (∼ 70 nm) layer at the surface in which the induced absorption coefficient is ∼ 7 × 105 cm−1.

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Time-resolved optical transmission during pulsed-laser annealing of ion-implanted amorphous silicon-on-sapphire

Microelectronics Reliability ◽

10.1016/0026-2714(83)91489-0 ◽

1983 ◽

Vol 23 (1) ◽

pp. 197-198

Keyword(s):

Amorphous Silicon ◽

Optical Transmission ◽

Laser Annealing ◽

Pulsed Laser ◽

Time Resolved ◽

Pulsed Laser Annealing ◽

Ion Implanted

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Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

MRS Proceedings ◽

10.1557/proc-23-633 ◽

1983 ◽

Vol 23 ◽

Author(s):

John T.A. Pollock ◽

Alex Rose

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Pressure Data ◽

Incident Laser ◽

Time Resolved ◽

Dissociation Pressure ◽

Pulsed Laser Annealing ◽

Modelling Studies ◽

Maximum Temperatures ◽

Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

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