Size and temperature effects on the thermoelectric power and electrical resistivity of bismuth telluride thin films

1988 ◽  
Vol 37 (9) ◽  
pp. 4552-4559 ◽  
Author(s):  
V. Damodara Das ◽  
N. Soundararajan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Bismuth Telluride ◽  
Temperature Effects

Size and temperature dependence of thermoelectric power and electrical resistivity of vacuum-deposited antimony thin films

1989 ◽  
Vol 24 (12) ◽  
pp. 4315-4323 ◽  
Author(s):  
V. Damodara Das ◽  
N. Soundararajan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Thermoelectric Power

Thickness and temperature effects on electrical resistivity of (Bi0.5Sb0.5)2Te3 thin films

2006 ◽  
Vol 60 (17-18) ◽  
pp. 2059-2065 ◽  
Author(s):  
P.G. Ganesan ◽  
V. Damodara Das
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Temperature Effects

The thermoelectric power, the dark electrical resistivity and the grain boundary potential barrier in CdIn2Se4 thin films

1996 ◽  
Vol 226 (3-4) ◽  
pp. 324-329 ◽  
Author(s):  
D. Abdel Hady ◽  
A.A. El-Shazly ◽  
H.S. Soliman ◽  
E.A. El-Shazly
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Grain Boundary ◽  
Thermoelectric Power ◽  
Potential Barrier ◽  
Boundary Potential

Thermoelectric Micro-Cooler of Bismuth Telluride Thin Films

2007 ◽  
Author(s):  
Koji Miyazaki ◽  
Jun-Ichiro Kurosaki ◽  
Masayuki Takashiri ◽  
Bertrand Lenoir ◽  
Hiroshi Tsukamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermoelectric Power ◽  
Bismuth Telluride ◽  
Figure Of Merit ◽  
Flash Evaporation ◽  
3Ω Method ◽  
Fine Powders ◽  
P Type

In this study, we fabricated bismuth-telluride thin films and their in-plane thermoelectric micro-coolers (4mm×4mm) by using the flash evaporation method. We prepared fine powders of Bi2.0Te2.7Se0.3 (n-type) and Bi0.4Te3.0Sb1.6 (p-type). The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 to 400°C. By optimizing the annealing temperature, thin films with high thermoelectric power factors of 8.8 μW/(cm·K2) in n-type and 13.8 μW/(cm·K2) in p-type are obtained. To evaluate the figure of merit of the thin film, the thermal conductivity of the n-type thin film is measured by the 3ω method. The thin film annealed at 200 °C exhibited a cross-plane thermal conductivity of 1.2 W/(m·K). Micro-coolers of flash-evaporated bismuth-telluride thin films are fabricated using three shadow masks. The shadow masks are prepared by standard micro-fabrication processes such as nitridation of Si, dry etching, and wet etching. Thermoelectric power of the as-grown thin film devices with 16 pairs of p-n legs are measured by YAG laser heating at the center of the devices. The thermoelectric power of thermoelectric legs is evaluated to be 180μV/K per one p-n leg pair. According to the Kelvin’s law, it corresponds to 54mV Peltier coefficient per p-n pair.

Size and temperature effects on thermoelectric power of β‐tin thin films

1983 ◽  
Vol 54 (2) ◽  
pp. 977-981 ◽  
Author(s):  
V. Damodara Das ◽  
Jyotish Chandra Mohanty
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Temperature Effects ◽  
Tin Thin Films

scholarly journals Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions.

2020 ◽  
Vol 9 (7) ◽  
pp. 894-896
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Selenium Concentration ◽  
Negative Temperature ◽  
Glass Substrates ◽  
Exponential Change

Sb-Se thin films of varying composition have been deposited on glass substrates at room temperature. These films were annealed at temperature interval of 50 0K. The electrical resistivity (ρ) and thermoelectric power (α) of same films were measured. The resistance of semiconducting films decreases rapidly on heating showing negative temperature coefficient of resistance (T.C.R.). The composition dependent resistivity shows exponential change, sharp fall of resistivity may be attributed due to increase of metallic ‘Sb’ in Sb-Se thin films. The composition dependent activation energy of Sb-Se thin films has been calculated. The activation energy (∆E) of semiconducting films was found to increase with selenium concentration. For different compositions thermoelectric power (α) increases upto 70 at. wt.% of Se concentration and then slowly decreases. The I-V characteristics of Sb-Se thin films were measured using copper (Cu) contacts. The films show ohmic conduction for different applied voltages as well as various concentrations of Selenium (Se) in Sb-Se thin films

Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films

2001 ◽  
Author(s):  
Elena I. Rogacheva ◽  
Olga N. Nashchekina ◽  
Irina A. Korzh ◽  
Lidiya G. Voinova ◽  
Igor M. Krivulkin
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Thermoelectric Power
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