Temperature-dependent resistivity of heavily doped silicon and germanium

1990 ◽  
Vol 41 (5) ◽  
pp. 3060-3068 ◽  
Author(s):  
Bo E. Sernelius
Keyword(s):  
Temperature Dependent ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Temperature Dependent Resistivity ◽  
Silicon And Germanium

Breakdown of microcreep in heavily doped silicon and germanium

1980 ◽  
Vol 14 (6) ◽  
pp. 601-603 ◽  
Author(s):  
H. Siethoff
Keyword(s):  
Doped Silicon ◽  
Heavily Doped ◽  
Silicon And Germanium

Effect of Heat Treatment on the Optical Properties of Heavily Doped Silicon and Germanium

1964 ◽  
Vol 35 (1) ◽  
pp. 206-211 ◽  
Author(s):  
W. G. Spitzer ◽  
G. W. Gobeli ◽  
F. A. Trumbore
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Silicon And Germanium

Optical constants of pure and heavily doped silicon and germanium: Electronic interband transitions

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 356-358 ◽  
Author(s):  
Luis Viña ◽  
Manuel Cardona
Keyword(s):  
Optical Constants ◽  
Interband Transitions ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Silicon And Germanium

Extrinsic heat capacity in the metallic regime of heavily doped silicon and germanium

1978 ◽  
Vol 17 (6) ◽  
pp. 2631-2639 ◽  
Author(s):  
K. F. Berggren
Keyword(s):  
Heat Capacity ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Silicon And Germanium

Simulation of Temperature-Dependent Resistivity for Manganite La 1/3 Ca 2/3 MnO 3

2006 ◽  
Vol 23 (6) ◽  
pp. 1551-1553 ◽  
Author(s):  
Cao Shuo ◽  
Zhou Qing-Li ◽  
Guan Dong-Yi ◽  
Lu Hui-Bin ◽  
Yang Guo-Zhen
Keyword(s):  
Temperature Dependent ◽  
Temperature Dependent Resistivity

Impact of arsenic and phosphorus concentration on oxygen content in heavily doped silicon single crystal

2020 ◽  
Vol 548 ◽  
pp. 125820
Author(s):  
Roberto Scala ◽  
Maria Porrini ◽  
Vladimir Voronkov
Keyword(s):  
Single Crystal ◽  
Oxygen Content ◽  
Silicon Single Crystal ◽  
Phosphorus Concentration ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Impact Of Arsenic

scholarly journals Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 143
Author(s):  
Sitao Fei ◽  
Hao Ren
Keyword(s):  
Quality Factor ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Cryogenic Cooling ◽  
Silicon On Insulator ◽  
Temperature Hysteresis ◽  
Sensing Applications ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Contour Mode

As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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