Quadratic temperature dependence of the electron-phonon scattering rate in disordered metals

1999 ◽  
Vol 60 (6) ◽  
pp. 3940-3943 ◽  
Author(s):  
S. Y. Hsu ◽  
P. J. Sheng ◽  
J. J. Lin
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
Scattering Rate ◽  
Disordered Metals ◽  
Quadratic Temperature ◽  
Electron Phonon Scattering

scholarly journals Thermo-Optical Effects in Plasmonic Metal Nanostructures

2021 ◽  
Vol 66 (2) ◽  
pp. 112
Author(s):  
O.A. Yeshchenko ◽  
A.O. Pinchuk
Keyword(s):  
Surface Plasmon Resonance ◽  
Temperature Dependence ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Laser Heating ◽  
Phonon Scattering ◽  
Red Shift ◽  
Au Nps ◽  
Scattering Rate ◽  
Electron Phonon Scattering

The effects of the temperature on the surface plasmon resonance (SPR) in noble metal nanoparticles at various temperatures ranging from 77 to 1190 K are reviewed. A temperature increase results in an appreciable red shift and leads to a broadening of the SPR in the nanoparticles (NPs). This observed thermal expansion along with an increase in the electron-phonon scattering rate with rising temperature emerge as the dominant physical mechanisms producing the red shift and broadening of the SPR. Strong temperature dependence of surface plasmon enhanced photoluminescence from silver (Ag) and copper (Cu) NPs is observed. The quantum photoluminescence yield of Ag nanoparticles decreases as the temperature increases, due to a decrease in the plasmon enhancement resulting from an increase in the electron-phonon scattering rate. An anomalous temperature dependence of the photoluminescence from Cu nanoparticles was also observed; the quantum yield of photoluminescence increases with the temperature. The interplay between the SPR and the interband transitions plays a critical role in this effect. The surface-plasmon involved laser heating of a dense 2D layer of gold (Au) NPs and of Au NPs in water colloids is also examined. A strong increase in the Au NP temperature occurs, when the laser frequency approaches the SPR. This finding supports the resonant plasmonic character of the laser heating of metal NPs. The sharp blue shift of the surface plasmon resonance in colloidal Au NPs at temperatures exceeding the water boiling point indicates the vapor-bubble formation near the surface of the NPs.

Quadratic temperature dependence of electron–phonon scattering in disordered V1−xPdx alloys

2005 ◽  
Vol 134 (3) ◽  
pp. 223-228 ◽  
Author(s):  
D. Biswas ◽  
A.K. Meikap ◽  
S.K. Chattopadhyay ◽  
S.K. Chatterjee ◽  
M. Ghosh
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
Quadratic Temperature ◽  
Electron Phonon Scattering

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

The effect of electron effective mass mismatch on electron - phonon scattering rate in a quantum well

1997 ◽  
Vol 12 (3) ◽  
pp. 296-299 ◽  
Author(s):  
Zheng Yisong ◽  
Lu Tianquan ◽  
Wang Yiding ◽  
Wu Xuhong ◽  
Zhang Chengxiang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Phonon Scattering ◽  
Electron Effective Mass ◽  
Scattering Rate ◽  
Electron Phonon Scattering

Anisotropy of the electron-phonon scattering rate in metals

1975 ◽  
Vol 19 (1-4) ◽  
pp. 49-50 ◽  
Author(s):  
V. F. Gantmakher ◽  
V. A. Gasparov
Keyword(s):  
Phonon Scattering ◽  
Scattering Rate ◽  
Electron Phonon Scattering

An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials

2017 ◽  
Vol 16 (04) ◽  
pp. 1750034 ◽  
Author(s):  
Ferdinand Grüneis
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Power Law ◽  
Phonon Scattering ◽  
Recombination Process ◽  
Semiconductor Materials ◽  
Conduction Electrons ◽  
Fluorescence Intermittency ◽  
The Impact ◽  
Electron Phonon Scattering

Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.

Sign in / Sign up

Export Citation Format

Share Document