Excitonic photoluminescence quenching by impact ionization of excitons and donors inGaAs/Al0.35Ga0.65Asquantum wells with an in-plane electric field

2000 ◽  
Vol 62 (23) ◽  
pp. 15871-15878 ◽  
Author(s):  
J. Kundrotas ◽  
G. Valušis ◽  
A. Čėsna ◽  
A. Kundrotaitė ◽  
A. Dargys ◽  
...  
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Photoluminescence Quenching

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Strong Electric Field ◽  
Radiative Transition ◽  
Hot Electrons ◽  
Acceptor Level ◽  
Threshold Values ◽  
Red Emission ◽  
V Band ◽  
Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

Impact Ionization in 4H-SiC Nuclear Radiation Detectors

2010 ◽  
Vol 645-648 ◽  
pp. 1077-1080
Author(s):  
Alexander M. Ivanov ◽  
Marina G. Mynbaeva ◽  
Anton V. Sadokhin ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Amplitude Spectrum ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Generation Process ◽  
Charge Generation ◽  
Initial Stage ◽  
Nuclear Radiation Detectors ◽  
Near Future

Nonequilibrium-charge transport has been studied in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film. The charge introduced by single α-particles was recorded by nuclear spectrometric techniques. The maximum electric field strength in the structure was 1.1 MV/cm. The recorded charge as a function of the reverse bias applied to the structure shows a superlinear rise. Simultaneously, the width of the amplitude spectrum increased superlinearly, too. The observed effect is attributed to the initial stage of impact ionization. The manifestation of the process at unusually low fields (~1.0 MV/cm) is accounted for by specific features of the charge generation process. The carriers generated by a α-particle are found to be originally "heated". The results obtained allow prognostication of the appearance of SiC detectors of the "proportional counter" type in the near future. This is enabled by the advances made in the field of high-voltage electronics in obtaining in practice the required electric field strengths.

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 575-578 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Heavy Ion ◽  
Charge Collection ◽  
Static Electric Field ◽  
The Impact ◽  
Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

The Strong Field Transport in 4H- and 6H-SiC at Low Temperature

2011 ◽  
Vol 679-680 ◽  
pp. 209-212 ◽  
Author(s):  
Vladimir Ilich Sankin ◽  
Pavel P. Shkrebiy ◽  
Alla A. Lepneva ◽  
Andrey G. Ostroumov ◽  
Pavel L. Abramov
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Electric Field ◽  
Impact Ionization ◽  
Strong Field ◽  
Impact Zone ◽  
Crystal Axis ◽  
Parallel Field ◽  
Natural Superlattice ◽  
Classical Picture

A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to depressing of the electron impact zone-zone ionization at 300K with the electric field directed along the crystal axis or the NSL axis. The NSL influence can be also observed in the nitrogen impact ionization at 4.2K. In this case for the parallel field the impurity breakdown has not been fixed up to the fields 1.6 MV/cm in 6H-SiC. These results are explained by the insufficient gain in miniband for the ionization electron energy. Therewith the impurity breakdown at the electric field perpendicular to this axis correlates with a classical picture.

Impact ionization rates of semiconductors in an electric field: The effect of collisional broadening

2001 ◽  
Vol 90 (2) ◽  
pp. 829-836 ◽  
Author(s):  
Justino R. Madureira ◽  
Dirk Semkat ◽  
Michael Bonitz ◽  
Ronald Redmer
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Collisional Broadening ◽  
Ionization Rates
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