Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations

2004 ◽  
Vol 69 (16) ◽  
Author(s):  
J. C. Cao
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Balance Equation ◽  
High Field ◽  
Impact Ionization ◽  
Equation Approach ◽  
Field Electron ◽  
Full Band

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors

Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M. Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
High Field ◽  
Field Electron ◽  
Full Band

Monte Carlo simulation of high field electron transport in ZnS

1995 ◽  
Vol 38 (3) ◽  
pp. 653-660 ◽  
Author(s):  
J. Fogarty ◽  
W. Kong ◽  
R. Solanki
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Field Electron

scholarly journals Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 781-786
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

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