Electron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers

Physical Review B ◽

10.1103/physrevb.72.125338 ◽

2005 ◽

Vol 72 (12) ◽

Author(s):

Boris Laikhtman ◽

Paul M. Solomon

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drag Effect ◽

Oxide Layers ◽

Electron Drag ◽

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Criteria for Plasmon-Enhanced Electron Drag in Si Metal–Oxide–Semiconductor Devices

IEEE Electron Device Letters ◽

10.1109/led.2015.2389261 ◽

2015 ◽

Vol 36 (3) ◽

pp. 265-267 ◽

Author(s):

Ming-Jer Chen ◽

Shang-Hsun Hsieh ◽

Yu-Chiao Liao ◽

Chuan-Li Chen ◽

Ming-Fu Tsai

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Tunneling spectroscopy possibilities in metal-oxide-semiconductor devices with a very thin oxide barrier

Thin Solid Films ◽

10.1016/0040-6090(92)90126-v ◽

1992 ◽

Vol 207 (1-2) ◽

pp. 213-219 ◽

Author(s):

G. Salace ◽

J.M. Patat

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Barrier ◽

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Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2015.1970 ◽

2015 ◽

Vol 7 (4) ◽

pp. 331-333 ◽

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Oxide Layer ◽

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.353884 ◽

1993 ◽

Vol 73 (1) ◽

pp. 205-215 ◽

Author(s):

M. Nafría ◽

J. Sun̄é ◽

X. Aymerich

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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