scholarly journals Intrinsic defects in multiferroic BiFeO3and their effect on magnetism

2012 ◽  
Vol 85 (10) ◽  
Author(s):  
Tula R. Paudel ◽  
Sitaram S. Jaswal ◽  
Evgeny Y. Tsymbal
Keyword(s):  
Intrinsic Defects

Effects of intrinsic defects on the photocatalytic water-splitting activities of PtSe2

2020 ◽  
Vol 45 (15) ◽  
pp. 8549-8557 ◽  
Author(s):  
Xin Yong ◽  
Jianqi Zhang ◽  
Xiangchao Ma
Keyword(s):  
Water Splitting ◽  
Intrinsic Defects ◽  
Photocatalytic Water Splitting

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

scholarly journals The Interplay between Drivers of Erythropoiesis and Iron Homeostasis in Rare Hereditary Anemias: Tipping the Balance

2021 ◽  
Vol 22 (4) ◽  
pp. 2204
Author(s):  
Simon Grootendorst ◽  
Jonathan de Wilde ◽  
Birgit van Dooijeweert ◽  
Annelies van Vuren ◽  
Wouter van Solinge ◽  
...  
Keyword(s):  
Iron Overload ◽  
Iron Metabolism ◽  
Iron Homeostasis ◽  
Significant Problem ◽  
Blood Transfusions ◽  
Intrinsic Defects ◽  
Chronic Anemia ◽  
Erythroid Development ◽  
Disease Specific

Rare hereditary anemias (RHA) represent a group of disorders characterized by either impaired production of erythrocytes or decreased survival (i.e., hemolysis). In RHA, the regulation of iron metabolism and erythropoiesis is often disturbed, leading to iron overload or worsening of chronic anemia due to unavailability of iron for erythropoiesis. Whereas iron overload generally is a well-recognized complication in patients requiring regular blood transfusions, it is also a significant problem in a large proportion of patients with RHA that are not transfusion dependent. This indicates that RHA share disease-specific defects in erythroid development that are linked to intrinsic defects in iron metabolism. In this review, we discuss the key regulators involved in the interplay between iron and erythropoiesis and their importance in the spectrum of RHA.

scholarly journals Intrinsic Defects in LiMn2O4: First-Principles Calculations

ACS Omega ◽  
2021 ◽  
Author(s):  
Xu Li ◽  
Jianchuan Wang ◽  
Shiwei Zhang ◽  
Lixian Sun ◽  
Weibin Zhang ◽  
...  
Keyword(s):  
First Principles ◽  
First Principles Calculations ◽  
Intrinsic Defects

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Magnetism of Cr-doped ZnO with intrinsic defects

2012 ◽  
Vol 111 (11) ◽  
pp. 113915 ◽  
Author(s):  
Z. Z. Weng ◽  
Z. G. Huang ◽  
W. X. Lin
Keyword(s):  
Intrinsic Defects ◽  
Doped Zno

Intrinsic defects in fused silica

1985 ◽  
Vol 71 (1-3) ◽  
pp. 443-445 ◽  
Author(s):  
A.R. Silin ◽  
L.N. Skuja
Keyword(s):  
Fused Silica ◽  
Intrinsic Defects
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