scholarly journals Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

2018 ◽  
Vol 98 (22) ◽  
Author(s):  
Xi Zhang ◽  
Blazej Grabowski ◽  
Fritz Körmann ◽  
Andrei V. Ruban ◽  
Yilun Gong ◽  
...  
Keyword(s):  
Gibbs Energy ◽  
Temperature Dependence ◽  
Stacking Fault

Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography

2020 ◽  
Author(s):  
Fumihiro Fujie ◽  
Shunta Harada ◽  
Kenji Hanada ◽  
Hiromasa Suo ◽  
Haruhiko Koizumi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stacking Fault ◽  
X Ray ◽  
Nitrogen Doped ◽  
Fault Behavior

On Temperature Dependence of Excess Gibbs Energy

1999 ◽  
Vol 64 (7) ◽  
pp. 1093-1099 ◽  
Author(s):  
Ivona Malijevská ◽  
Anatol Malijevský
Keyword(s):  
Heat Capacity ◽  
Gibbs Energy ◽  
Temperature Dependence ◽  
Excess Gibbs Energy ◽  
Excess Enthalpy ◽  
Excess Heat Capacity ◽  
Wilson Equation ◽  
Excess Heat ◽  
Energy Excess ◽  
Wilson And Nrtl Equations

Temperature dependence of GE is discussed for three widely used equations linear and nonlinear in parameters. It is shown that the Wilson equation predicts always positive excess heat capacity regardless of values of its parameters. Several temperature modifications of the Redlich-Kister, Wilson and NRTL equations are discussed with respect to the sign of the excess Gibbs energy, excess enthalpy and excess heat capacity.

scholarly journals Temperature dependence of the specific heat and thermodynamic functions AК1М2 alloy, doped strontium

2019 ◽  
Vol 21 (1) ◽  
pp. 35-42 ◽  
Author(s):  
I. N. Ganiev ◽  
S. E. Otajonov ◽  
N. F. Ibrohimov ◽  
M. Mahmudov
Keyword(s):  
Heat Capacity ◽  
Gibbs Energy ◽  
Specific Heat ◽  
Temperature Dependence ◽  
Specific Heat Capacity ◽  
Thermodynamic Functions ◽  
Inverse Relationship ◽  
Alloying Element ◽  
Enthalpy And Entropy ◽  
Increasing Temperature

In the heat «cooling» investigated the temperature dependence of the specific heat capacity and thermodynamic functions doped strontium alloy AK1М2 in the range 298,15—900 K. Mathematical models are obtained that describe the change in these properties of alloys in the temperature range 298.15—900 K, as well as on the concentration of the doping component. It was found that with increasing temperature, specific heat capacity, enthalpy and entropy alloys increase, and the concentration up to 0.5 wt.% of the alloying element decreases. Gibbs energy values have an inverse relationship, i.e., temperature — decreases the content of alloying component — is up to 0.5 wt.% growing.

Solubility of non-polar gases in cyclohexanone between 273.15 and 303.15 K at 101.32 kPa partial pressure of gas

1987 ◽  
Vol 65 (9) ◽  
pp. 2198-2202 ◽  
Author(s):  
María Asunción Gallardo ◽  
José María Melendo ◽  
José Santiago Urieta ◽  
Celso Gutierrez Losa
Keyword(s):  
Gibbs Energy ◽  
Partial Pressure ◽  
Temperature Dependence ◽  
Hard Sphere ◽  
Scaled Particle Theory ◽  
Sphere Diameter ◽  
Particle Theory ◽  
Enthalpy And Entropy

Solubility measurements of several non-polar gases (He, Ne, Ar, Kr, Xe, H2, D2, N2, O2, C2H4, C2H6, CF4, SF6, andCO2) in cyclohexanone at 273.15 to 303.15 K and a partial pressure of gas of 101.32 kPa, are reported. Gibbs energy, enthalpy, and entropy of solution at 298.15 K and 101.32 kPa partial pressure of gas were evaluated. Effective hard-sphere diameter temperature dependence has been studied and its effect on the calculated SPT (Scaled Particle Theory) solubilities, and enthalpies and entropies of solution was also examined.

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers

2010 ◽  
Vol 645-648 ◽  
pp. 327-330 ◽  
Author(s):  
Jawad ul Hassan ◽  
Peder Bergman
Keyword(s):  
Temperature Dependence ◽  
Optical Microscopy ◽  
Optical Spectrum ◽  
Carrier Lifetime ◽  
Geometrical Structure ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Structural Defects ◽  
Forward Voltage ◽  
Substrate Interface

An extended structural defects which locally drastically reduces the carrier lifetime, has been observed in as-grown epilayers. A combination of back polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault inside the epilayer. The fault started close to the epi-substrate interface, expanded initially rapidly but changed geometry after some time and reduced in size during further growth. The optical spectrum as well as the temperature dependence from this fault is identical to the emission from the single Shockley stacking faults previously only observed and formed in the bipolar diodes during forward voltage operation.

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