scholarly journals G -parity breaking in τ−→η(′)π−ντ decays induced by the η(′)γγ form factor

2017 ◽  
Vol 96 (5) ◽  
Author(s):  
G. Hernández-Tomé ◽  
G. López Castro ◽  
P. Roig
Keyword(s):  
Form Factor ◽  
G Parity ◽  
Parity Breaking

THE STRANGENESS CHANGING ANTINEUTRINO REACTION ${\bar\nu}_L+P\longrightarrow\Lambda+L^+$

2005 ◽  
Vol 20 (06) ◽  
pp. 1212-1220 ◽  
Author(s):  
S. L. MINTZ
Keyword(s):  
Form Factor ◽  
Cross Section ◽  
Cross Sections ◽  
Form Factors ◽  
Tau Lepton ◽  
Electric Form Factor ◽  
G Parity ◽  
The Cross ◽  
Pseudoscalar Form Factor ◽  
Near Threshold

We obtain the cross sections for the reactions [Formula: see text] where L is a massive lepton, i.e. a muon or a tau lepton. We do this from near threshold to relativistic energies. We further obtain the contributions of various form factors and interference terms to the cross section with a view to discovering if the contributions from hard to observe form factors such as the weak pseudoscalar form factor, FP, and the weak electric form factor, FE might be obtained via these reactions. The form factor FE is particularly interesting as in the more usually observed p↔n transition it is a second class current and forbidden by G-parity. However in the p↔Λ transition it is not forbidden and it would be desirable to learn if it is present. Finally we discuss our results and prospects for these experiments.

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

Near-field recording for small form factor optical disks

2007 ◽  
Vol 37 (2) ◽  
pp. 175-180 ◽  
Author(s):  
Jin-Hong Kim
Keyword(s):  
Form Factor ◽  
Near Field ◽  
Small Form ◽  
Field Recording ◽  
Optical Disks ◽  
Small Form Factor

MAGNETIC FORM FACTOR MEASUREMENTS IN CERIUM HEXABORIDE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-273-C7-278 ◽  
Author(s):  
P. Burlet ◽  
J. X. Boucherle ◽  
J. Rossat-Mignod ◽  
J. W. Cable ◽  
W. C. Koehler ◽  
...  
Keyword(s):  
Form Factor ◽  
Magnetic Form Factor

FORM FACTOR MEASUREMENTS IN CeTe

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-263-C7-271 ◽  
Author(s):  
J. X. Boucherle ◽  
D. Ravot ◽  
J. Schweizer
Keyword(s):  
Form Factor

FORM FACTOR MEASUREMENT IN FERROMAGNETIC COBALT ORTHOVANADATE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-253-C7-256
Author(s):  
H. Fuess ◽  
R. Müller ◽  
D. Schwabe ◽  
F. Tasset
Keyword(s):  
Form Factor ◽  
Factor Measurement ◽  
Ferromagnetic Cobalt

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

Form Factor of an Open-Shell Atom

2000 ◽  
Vol 89 (1) ◽  
pp. 4
Author(s):  
A. N. Khoperskiı̆
Keyword(s):  
Form Factor ◽  
Open Shell

Investigating interaction with a ring form factor

2017 ◽  
Author(s):  
Ashley Colley ◽  
Virve Inget ◽  
Inka Rantala ◽  
Jonna Häkkilä
Keyword(s):  
Form Factor ◽  
Ring Form
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