scholarly journals Autoionization and Dressing of Excited Excitons by Free Carriers in Monolayer WSe2

2020 ◽  
Vol 125 (26) ◽  
Author(s):  
Koloman Wagner ◽  
Edith Wietek ◽  
Jonas D. Ziegler ◽  
Marina A. Semina ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Free Carriers

Free carriers reactivation on p+-mesoporous silicon through ammonia adsorption: a FTIR study

2004 ◽  
Vol 100 (1-2) ◽  
pp. 205-208 ◽  
Author(s):  
F. Geobaldo ◽  
P. Rivolo ◽  
G.P. Salvador ◽  
G. Amato ◽  
L. Boarino ◽  
...  
Keyword(s):  
Ammonia Adsorption ◽  
Mesoporous Silicon ◽  
Free Carriers ◽  
Ftir Study

Miniaturized TEG with thermal generation of free carriers

2007 ◽  
Vol 1 (6) ◽  
pp. 241-243 ◽  
Author(s):  
Gerhard Span ◽  
Martin Wagner ◽  
Tibor Grasser ◽  
Lennart Holmgren
Keyword(s):  
Thermal Generation ◽  
Free Carriers

EFFECTS OF QUANTUM CONFINEMENT ON LOW FREQUENCY NOISE IN δ-DOPED GaAs STRUCTURES GROWN BY MBE

2002 ◽  
Vol 02 (01) ◽  
pp. L37-L45
Author(s):  
X. Y. CHEN ◽  
P. M. KOENRAAD
Keyword(s):  
Quantum Confinement ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Free Carriers ◽  
In Doping ◽  
Three Samples ◽  
Different Temperatures ◽  
Lower Magnitude ◽  
Different Thickness

Low frequency noise (LFN) was measured in δ-doped GaAs structures in which the free carriers are confined to a 2-dimensional plane. Three samples grown at different temperatures, resulting in doping layers of a different thickness, are used to study the effects of quantum confinement on the LFN. We observed both 1/f noise and generation-recombination noise components. We find that a stronger quantum confinement results in a bigger Hall mobility and a lower magnitude of the 1/f noise.

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