Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures

Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a [Formula: see text][Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into [Formula: see text][Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

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Finite difference method for analyzing band structure in semiconductor heterostructures without spurious solutions

Journal of Applied Physics ◽

10.1063/1.4899247 ◽

2014 ◽

Vol 116 (17) ◽

pp. 173702 ◽

Cited By ~ 9

Keyword(s):

Finite Difference ◽

Finite Difference Method ◽

Band Structure ◽

Difference Method ◽

Semiconductor Heterostructures ◽

Spurious Solutions

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Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

Optica Applicata ◽

10.37190/oa210111 ◽

2021 ◽

Vol 51 (1) ◽

Author(s):

Rafał Antoni Bogaczewicz ◽

Ewa Popko ◽

Katarzyna Renata Gwóźdź

Keyword(s):

Band Structure ◽

Electric Potential ◽

Energy Band ◽

Theoretical Calculations ◽

Energy Band Diagram ◽

Depletion Region ◽

Semiconductor Heterostructures ◽

Band Diagram ◽

Approximation Model

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

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Band-Structure Engineering in Novel Optoelectronic Devices

MRS Proceedings ◽

10.1557/proc-421-125 ◽

1996 ◽

Vol 421 ◽

Cited By ~ 2

Author(s):

H. Shen ◽

M. Dutta

Keyword(s):

Thermal Expansion ◽

Band Structure ◽

Lattice Mismatch ◽

Optoelectronic Devices ◽

Semiconductor Heterostructures ◽

Promising Area ◽

Structure Engineering ◽

Strained Materials ◽

Thermal Expansion Coefficient Mismatch ◽

Device Research

AbstractIn this paper we show that unconventionally strained semiconductor heterostructures with unusual band structure exhibit novel and desirable electronic and optical properties not seen in the conventional strained materials. In addition to improving the performance of existing components, unconventional strain may be used to achieve greater functionality in novel optoelectronic devices. We give as examples three such devices that we have conceived and demonstrated, in the two areas of strain, lattice mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

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On the band-structure lineup at Schottky contacts and semiconductor heterostructures

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.03.024 ◽

2014 ◽

Vol 28 ◽

pp. 2-12 ◽

Cited By ~ 14

Author(s):

Winfried Mönch

Keyword(s):

Band Structure ◽

Schottky Contacts ◽

Semiconductor Heterostructures

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Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106600 ◽

1988 ◽

Vol 46 ◽

pp. 908-909

Author(s):

E.G. Bithell ◽

W.M. Stobbs

Keyword(s):

Ion Implantation ◽

Diffusion Coefficients ◽

Dark Field ◽

Atomic Mass ◽

Composition Profile ◽

Semiconductor Heterostructures ◽

Transmission Electron ◽

Microscope Images ◽

Damage Process ◽

Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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Determination of the lattice translation across {110} APBs in GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100105060 ◽

1988 ◽

Vol 46 ◽

pp. 600-601

Author(s):

D.R. Rasmussen ◽

N.-H. Cho ◽

C.B. Carter

Keyword(s):

Grain Boundaries ◽

Lower Energy ◽

Antiphase Boundary ◽

The Other ◽

Boundary Structure ◽

Interface Plane ◽

Inversion Symmetry ◽

High Angle ◽

Equilibrium Distance

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.

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