scholarly journals Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Rafał Antoni Bogaczewicz ◽  
Ewa Popko ◽  
Katarzyna Renata Gwóźdź
Keyword(s):  
Band Structure ◽  
Electric Potential ◽  
Energy Band ◽  
Theoretical Calculations ◽  
Energy Band Diagram ◽  
Depletion Region ◽  
Semiconductor Heterostructures ◽  
Band Diagram ◽  
Approximation Model

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

Cadmium metavanadate mixed oxide nanorods for the chemiresistive detection of methane molecules

2020 ◽  
Vol 44 (29) ◽  
pp. 12473-12485 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
P. R. Reshma ◽  
...  
Keyword(s):  
Thin Film ◽  
Mixed Oxide ◽  
Energy Band ◽  
Gas Sensing ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Band Bending ◽  
Sensing Mechanism ◽  
Oxide Nanorods

An energy band diagram of the V2O5–CdO thin film and illustration of the methane (CH4) gas sensing mechanism with band bending.

MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation

2019 ◽  
Vol 34 (12) ◽  
pp. 125007 ◽  
Author(s):  
B R Borodin ◽  
F A Benimetskiy ◽  
M S Dunaevskiy ◽  
V A Sharov ◽  
A N Smirnov ◽  
...  
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram

Effect of La0.67Sr0.33 MnO3 Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O3/Nb:SrTiO3 Heterostructures

NANO ◽  
2020 ◽  
Vol 15 (07) ◽  
pp. 2050084
Author(s):  
Jing Yi Dong ◽  
Yu Bai ◽  
Hang Yu Zheng ◽  
He Yang Huang ◽  
Jun Liang Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Resistive Switching ◽  
Interfacial Energy ◽  
Energy Band ◽  
Interface Structure ◽  
Energy Band Structure ◽  
Depletion Layer ◽  
Semiconductor Heterostructures ◽  
Ferroelectric Polarization ◽  
Layer Width

Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a [Formula: see text][Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into [Formula: see text][Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

Direct extrapolation techniques on the energy band diagram of BiVO4 thin films

2020 ◽  
pp. 412719
Author(s):  
Sharifah Nurain Syed Nasir ◽  
Nurul Aida Mohamed ◽  
Mohamad Azri Tukimon ◽  
Mohamad Firdaus Mohamad Noh ◽  
Nurul Affiqah Arzaee ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Direct Extrapolation
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