Strain Induced Band Structure Modifications in Semiconductor Heterostructures and Consequences for Electronic and Optical Devices

1991 ◽  
pp. 653-667 ◽  
Author(s):  
Jasprit Singh
Keyword(s):  
Band Structure ◽  
Optical Devices ◽  
Semiconductor Heterostructures

MULTIBAND FINITE ELEMENT MODELING OF WAVEFUNCTION-ENGINEERED ELECTRO-OPTICAL DEVICES

1995 ◽  
Vol 04 (01) ◽  
pp. 191-243 ◽  
Author(s):  
L. R. RAM-MOHAN ◽  
J. R. MEYER
Keyword(s):  
Finite Element ◽  
Energy Levels ◽  
Optical Devices ◽  
General Concept ◽  
Semiconductor Heterostructures ◽  
Matrix Elements ◽  
Transition Matrix Elements ◽  
Band Mixing ◽  
Degree Of Control ◽  
Structure Engineering

Recent advances in the modeling of semiconductor heterostructures with complex geometries allow one to go beyond band-structure engineering to the more general concept of wavefunction engineering. In this work, we illustrate how tailoring the band mixing and spatial distribution of the carriers leads to an expanded degree of control over such properties as the dispersion relations, interband and intersubband transition matrix elements, nonlinear optical and electro-optical coefficients, and lifetimes. The computations are based on a multiband finite element method (FEM) approach which readily yields energy levels, electron and hole wavefunctions, and optical matrix elements for heterostructures with arbitrary layer thickness, material composition, and internal strain. Application of the FEM to laterally-patterned heterostructures is also discussed.

Effect of La0.67Sr0.33 MnO3 Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O3/Nb:SrTiO3 Heterostructures

NANO ◽  
2020 ◽  
Vol 15 (07) ◽  
pp. 2050084
Author(s):  
Jing Yi Dong ◽  
Yu Bai ◽  
Hang Yu Zheng ◽  
He Yang Huang ◽  
Jun Liang Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Resistive Switching ◽  
Interfacial Energy ◽  
Energy Band ◽  
Interface Structure ◽  
Energy Band Structure ◽  
Depletion Layer ◽  
Semiconductor Heterostructures ◽  
Ferroelectric Polarization ◽  
Layer Width

Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a [Formula: see text][Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into [Formula: see text][Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

scholarly journals Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Rafał Antoni Bogaczewicz ◽  
Ewa Popko ◽  
Katarzyna Renata Gwóźdź
Keyword(s):  
Band Structure ◽  
Electric Potential ◽  
Energy Band ◽  
Theoretical Calculations ◽  
Energy Band Diagram ◽  
Depletion Region ◽  
Semiconductor Heterostructures ◽  
Band Diagram ◽  
Approximation Model

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

Band-Structure Engineering in Novel Optoelectronic Devices

1996 ◽  
Vol 421 ◽  
Author(s):  
H. Shen ◽  
M. Dutta
Keyword(s):  
Thermal Expansion ◽  
Band Structure ◽  
Lattice Mismatch ◽  
Optoelectronic Devices ◽  
Semiconductor Heterostructures ◽  
Promising Area ◽  
Structure Engineering ◽  
Strained Materials ◽  
Thermal Expansion Coefficient Mismatch ◽  
Device Research

AbstractIn this paper we show that unconventionally strained semiconductor heterostructures with unusual band structure exhibit novel and desirable electronic and optical properties not seen in the conventional strained materials. In addition to improving the performance of existing components, unconventional strain may be used to achieve greater functionality in novel optoelectronic devices. We give as examples three such devices that we have conceived and demonstrated, in the two areas of strain, lattice mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

scholarly journals Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures

1984 ◽  
Vol 53 (27) ◽  
pp. 2579-2582 ◽  
Author(s):  
J. P. Eisenstein ◽  
H. L. Störmer ◽  
V. Narayanamurti ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Band Structure ◽  
Semiconductor Heterostructures ◽  
Inversion Symmetry

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band
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