scholarly journals Full electric-field tuning of the nonreciprocal transport effect in massive chiral fermions with trigonal warping

2021 ◽  
Vol 3 (3) ◽  
Author(s):  
Elisha Cho-Hao Lu ◽  
Cheng-Tung Cheng ◽  
Liang Li ◽  
Wei-Li Lee
2021 ◽  
Author(s):  
Wei-Li Lee ◽  
Elisha Cho-Hao Lu ◽  
Liang Li ◽  
Cheng-Tung Cheng

Abstract In a noncentrosymmetric system, an intrinsic electric polarization is allowed and may lead to unusual nonreciprocal charge transport phenomena. As a result, a current-dependent resistance, arising from the magnetoelectric anisotropy term of k · E × B, appears and acts as a current rectifier with the amount of rectification being linearly proportional to the magnitude of both current and applied magnetic field. In this work, a different type of nonreciprocal transport effect was demonstrated in a graphene-based device, which requires no external magnetic field. Owing to the unique pseudospin (valley) degree of freedom in chiral fermions with trigonal warping, a large nonreciprocal transport effect was uncovered in a gapped bilayer graphene, where electric-field tunabilities of the band gap and valley polarization play an important role. The exact cancellation of nonreciprocal effect between two different valleys is effectively removed by breaking the inversion symmetry via electric gatings. The magnitude of the current rectification appears to be at a maximum when the Fermi surface undergoes a Lifshitz transition near the band edges, which is proportional to the current and the displacement field strength. The full electric-field tuning of the nonreciprocal transport effect without a magnetic field opens up a new direction for valleytronics in two-dimensional based devices.


Author(s):  
G. F. Rempfer

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.


Author(s):  
Patrick P. Camus

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).


1993 ◽  
Vol 3 (8) ◽  
pp. 1201-1225 ◽  
Author(s):  
G. N�ron de Surgy ◽  
J.-P. Chabrerie ◽  
O. Denoux ◽  
J.-E. Wesfreid

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