Intensity ofN-beam X-ray diffraction: kinematical theory for a small crystal

2005 ◽  
Vol 61 (2) ◽  
pp. 246-251 ◽  
Author(s):  
Shijo Nagao
1994 ◽  
Vol 375 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. H. Carter ◽  
V. F. Tsvetkov ◽  
C. Fazi

AbstractSynchrotron white beam X-ray topography, along with optical microscopy and scanning electron microscopy, has been used to characterize structural defects which are potentially detrimental to device performance in PVT 6H-SiC single crystals. Line defects running along the [0001] axis, known as “micropipes”, were studied extensively. Detailed analysis of topographic image contrast associated with “micropipes”, based on the kinematical theory of X-ray diffraction, established that the so-called “micropipes” are screw dislocations with large Burgers vectors.


1992 ◽  
Vol 45 (21) ◽  
pp. 12198-12201 ◽  
Author(s):  
G. C. La Rocca ◽  
L. Tapfer ◽  
R. Cingolani ◽  
K. Ploog

1988 ◽  
Vol 32 ◽  
pp. 279-284
Author(s):  
J. Chaudhuri ◽  
S. Shah ◽  
J.P. Harbison

AbstractA method was described for determining the thickness of epitaxical thin films common to electronic materials. The equations were developed based on the kinematical theory of X-ray diffraction and effects of both primary and secondary extinctions were considered. As an example of the applications of this method, thickness measurement of AlGaAs thin films on GaAs was demonstrated. These films were grown by molecular beam epitaxy. The integrated reflected intensities from the film and the substrate were obtained by the X-ray double crystal diffractometer. An excellent agreement was obtained between the results from X-ray measurements and RHEED oscillation data.


1993 ◽  
Vol 308 ◽  
Author(s):  
J. Chaudhuri ◽  
S.M. Alyan ◽  
A.F. Jankowski

ABSTRACTThe structure, composition and strain in Ni/Ti multilayers are analyzed using x-ray diffraction theories. The repeat period of the multilayers used in this study ranges from 1.3 to 12.8 nm. The composition modulation is obtained by using a kinematical theory of x-ray diffraction. A sine wave for the shorter repeat period and a rectangular wave for the longer repeat period are predicted for the composition modulation. The strain within each atomic layer is found by iteratively fitting the experimental x-ray diffraction pattern with the simulated one from a dynamical theory of x-ray diffraction. The strain at the interface is tensile in Ni and compressive in Ti with a complete relaxation of the strain at a distance away from the interface.


1993 ◽  
Vol 312 ◽  
Author(s):  
B. Jenichen ◽  
K. Ploog ◽  
O. Brandt

AbstractThe lateral periodicity of an InAs quantum dot array in a GaAs matrix is measured in the differential rocking curve by triple crystal diffractometry. The quantum dot array was grown by molecular beam epitaxy of submonolayer InAs films on a terraced (001) GaAs substrate. The x-ray diffraction of the array is described in the limits of the kinematical theory. Both the changes in the scattering factor and the tetragonal deformations due to the InAs quantum dots are taken into account. The lateral periodicity of the array along [100] is 8–11nm dependent on the position of the measured region compared with an average of 10nm obtained from the miscut of the sample. In addition the vertical periodicity of the array is measured by comparison of the double crystal rocking curve with the corresponding simulation in the dynamical approximation. The vertical period of the array along [001] is 26.5nm. The coverage of the submonolayer InAs films estimated from the same measurement is 0.4. The absence of plastic relaxation is confirmed by x-ray topography.


2016 ◽  
Vol 72 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Francisco Tiago Leitão Muniz ◽  
Marcus Aurélio Ribeiro Miranda ◽  
Cássio Morilla dos Santos ◽  
José Marcos Sasaki

The Scherrer equation is a widely used tool to determine the crystallite size of polycrystalline samples. However, it is not clear if one can apply it to large crystallite sizes because its derivation is based on the kinematical theory of X-ray diffraction. For large and perfect crystals, it is more appropriate to use the dynamical theory of X-ray diffraction. Because of the appearance of polycrystalline materials with a high degree of crystalline perfection and large sizes, it is the authors' belief that it is important to establish the crystallite size limit for which the Scherrer equation can be applied. In this work, the diffraction peak profiles are calculated using the dynamical theory of X-ray diffraction for several Bragg reflections and crystallite sizes for Si, LaB6and CeO2. The full width at half-maximum is then extracted and the crystallite size is computed using the Scherrer equation. It is shown that for crystals with linear absorption coefficients below 2117.3 cm−1the Scherrer equation is valid for crystallites with sizes up to 600 nm. It is also shown that as the size increases only the peaks at higher 2θ angles give good results, and if one uses peaks with 2θ > 60° the limit for use of the Scherrer equation would go up to 1 µm.


2019 ◽  
Vol 75 (5) ◽  
pp. 772-776
Author(s):  
A. N. C. Lima ◽  
M. A. R. Miranda ◽  
J. M. Sasaki

The several mathematical formulations of X-ray diffraction theory facilitate its understanding and use as a materials characterization technique, since one can opt for the simplest formulation that adequately describes the case being studied. As synchrotrons advance, new techniques are developed and there is a need for simple formulations to describe them. One of these techniques is soft resonant X-ray diffraction, in which the X-rays suffer large attenuation due to absorption. In this work, an expression is derived for the X-ray diffraction profiles of reflections where the linear absorption is far greater than primary extinction; in other words, the crystal is superabsorbing. The case is considered of a parallel plate crystal, for which the diffraction profile of the superabsorbing crystal is computed as a function of crystal size normal to the diffraction planes. For thin crystals or those with negligible absorption, the diffraction profile of a superabsorbing crystal coincides with the result of the kinematical theory. For thick crystals, the absorption intrinsic profile is obtained, described by a Lorentzian function and characterized by the absorption intrinsic width. This absorption intrinsic width is proportional to the linear absorption coefficient and its expression is similar to that for the Darwin width, while the absorption intrinsic profile is a special case of the Laue dynamical theory, and it is similar to the Ornstein–Zernike Lorentzian. The formulation of X-ray diffraction of superabsorbing crystals is simple and provides new perspectives for the soft resonant X-ray diffraction technique.


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