A microcontroller forin situsingle-crystal diffraction measurements with a PILATUS-2M detector under an alternating electric field

2017 ◽  
Vol 50 (3) ◽  
pp. 975-977 ◽  
Author(s):  
Hyeokmin Choe ◽  
Stefan Heidbrink ◽  
Michael Ziolkowski ◽  
Ullrich Pietsch ◽  
Vadim Dyadkin ◽  
...  
Keyword(s):  
Electric Field ◽  
Low Voltage ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
Area Detector ◽  
Electric Field Dependence ◽  
Alternating Electric Field ◽  
Voltage Amplifier

A new data acquisition system forin situtime-resolved three-dimensional reciprocal space mapping is reported. The system is based on a programmable microcontroller for generating a functional low-voltage signal, a pixel area detector serving as a master clock and a high-voltage amplifier. Both Bragg and diffuse scattering can be mapped in a large volume of reciprocal space under an alternating electric field of a pre-programmed shape. The system has been tested at the Swiss–Norwegian Beamline BM01 of the European Synchrotron by measuring the electric field dependence of diffuse X-ray scattering from a functional perovskite-based ferroelectric single crystal.

Time-resolved X-ray reciprocal space mapping of the crystal under external electric field

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
X Ray

Time-resolved X-ray reciprocal space mapping of a crystal in an external electric field

2019 ◽  
Vol 62 (2) ◽  
pp. 179-185 ◽  
Author(s):  
N V Marchenkov ◽  
A G Kulikov ◽  
I I Atknin ◽  
A A Petrenko ◽  
A E Blagov ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
X Ray

Multipurpose diffractometer for in situ X-ray crystallography of functional materials

2021 ◽  
Vol 54 (3) ◽  
Author(s):  
Semën Gorfman ◽  
David Spirito ◽  
Netanela Cohen ◽  
Peter Siffalovic ◽  
Peter Nadazdy ◽  
...  
Keyword(s):  
Electric Field ◽  
Materials Science ◽  
Functional Materials ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
X Ray Crystallography ◽  
Area Detector ◽  
Characterization Of Materials

Laboratory X-ray diffractometers play a crucial role in X-ray crystallography and materials science. Such instruments still vastly outnumber synchrotron facilities and are responsible for most of the X-ray characterization of materials around the world. The efforts to enhance the design and performance of in-house X-ray diffraction instruments benefit a broad research community. Here, the realization of a custom-built multipurpose four-circle diffractometer in the laboratory for X-ray crystallography of functional materials at Tel Aviv University, Israel, is reported. The instrument is equipped with a microfocus Cu-based X-ray source, collimating X-ray optics, four-bounce monochromator, four-circle goniometer, large (PILATUS3 R 1M) pixel area detector, analyser crystal and scintillating counter. It is suitable for a broad range of tasks in X-ray crystallography/structure analysis and materials science. All the relevant X-ray beam parameters (total flux, flux density, beam divergence, monochromaticity) are reported and several applications such as determination of the crystal orientation matrix and high-resolution reciprocal-space mapping are demonstrated. The diffractometer is suitable for measuring X-ray diffraction in situ under an external electric field, as demonstrated by the measurement of electric-field-dependent rocking curves of a quartz single crystal. The diffractometer can be used as an independent research instrument, but also as a training platform and for preparation for synchrotron experiments.

Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

2015 ◽  
Vol 48 (4) ◽  
pp. 1000-1010 ◽  
Author(s):  
Sondes Bauer ◽  
Sergey Lazarev ◽  
Martin Bauer ◽  
Tobias Meisch ◽  
Marian Caliebe ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Stacking Faults ◽  
Vapour Phase ◽  
Stacking Fault ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Partial Dislocations ◽  
Semipolar Gan

A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20 bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal–organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar (11{\overline 2}2) GaN grown on anr-plane (1{\overline 1}02) PSS and semipolar (10{\overline 1}1) GaN grown on ann-plane (11{\overline 2}3) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar (11{\overline 2}2) GaN has been studied.

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

2012 ◽  
Vol 45 (5) ◽  
pp. 1046-1053 ◽  
Author(s):  
Wen Hu ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Miwa Kozu ◽  
Masamitu Takahasi
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Real Time ◽  
High Speed ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

scholarly journals High-resolution three-dimensional reciprocal-space mapping of InAs nanowires

2009 ◽  
Vol 42 (3) ◽  
pp. 369-375 ◽  
Author(s):  
S. O. Mariager ◽  
S. L. Lauridsen ◽  
A. Dohn ◽  
N. Bovet ◽  
C. B. Sørensen ◽  
...  
Keyword(s):  
Cross Sections ◽  
Diffuse Scattering ◽  
Three Dimensional ◽  
Grazing Incidence ◽  
Reciprocal Space ◽  
Two Dimensional ◽  
Pixel Detector ◽  
Reciprocal Space Mapping ◽  
General Terms ◽  
Inas Nanowires

Grazing-incidence X-ray diffraction is combined with a two-dimensional pixel detector to obtain three-dimensional reciprocal-space maps of InAs nanowires grown by molecular beam epitaxy. This rapid data-acquisition technique and the necessary correction factors are described in general terms, as well as for the specific setup used, for which a resolution of ∼2 × 10−3 Å is computed. The three-dimensional data sets are obtained by calculating the reciprocal space coordinates for every pixel in the detected images, and are used to map the diffuse scattering from the nanowires as both two-dimensional reciprocal-space maps and three-dimensional isosurfaces. The InAs nanowires are shown to consist mainly of wurtzite crystal with ac/aratio of 1.641. The diffuse scattering reveals two different facet structures, both resulting in hexagonal cross sections of the nanowires.

Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping

2014 ◽  
Vol 47 (2) ◽  
pp. 762-769 ◽  
Author(s):  
Gilbert André Chahine ◽  
Marie-Ingrid Richard ◽  
Roberto Arturo Homs-Regojo ◽  
Thu Nhi Tran-Caliste ◽  
Dina Carbone ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Continuous Mapping ◽  
Real Space ◽  
Reciprocal Space ◽  
Data Sets ◽  
Two Dimensional ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Study Materials ◽  
User Friendly

Numerous imaging methods have been developed over recent years in order to study materials at the nanoscale. Within this context, scanning X-ray diffraction microscopy has become a routine technique, giving access to structural properties with sub-micrometre resolution. This article presents an optimized technique and an associated software package which have been implemented at the ID01 beamline (ESRF, Grenoble). A structural scanning probe microscope with intriguing imaging qualities is obtained. The technique consists in a two-dimensional quick continuous mapping with sub-micrometre resolution of a sample at a given reciprocal space position. These real space maps are made by continuously moving the sample while recording scattering images with a fast two-dimensional detector for every point along a rocking curve. Five-dimensional data sets are then produced, consisting of millions of detector images. The images are processed by the user-friendly X-ray strain orientation calculation software (XSOCS), which has been developed at ID01 for automatic analysis. It separates tilt and strain and generates two-dimensional maps of these parameters. At spatial resolutions of typically 200–800 nm, this quick imaging technique achieves strain sensitivity below Δa/a= 10−5and a resolution of tilt variations down to 10−3° over a field of view of 100 × 100 µm.

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