Temperature dependence of hot-electron degradation in bipolar transistors

1993 ◽  
Vol 40 (9) ◽  
pp. 1669-1674 ◽  
Author(s):  
C.-J. Huang ◽  
T.A. Grotjohn ◽  
C.J. Sun ◽  
D.K. Reinhard ◽  
C.-C.W. Yu
Keyword(s):  
Temperature Dependence ◽  
Bipolar Transistors ◽  
Hot Electron

Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

1997 ◽  
Vol 500 ◽  
Author(s):  
Akira Nishiyama ◽  
Osamu Arisumi ◽  
Makoto Yoshimi
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculation ◽  
Temperature Dependence ◽  
Electrical Measurement ◽  
Bipolar Transistors ◽  
Floating Body ◽  
High Dose ◽  
Base Current ◽  
Source Regions ◽  
Heavily Doped

ABSTRACTN+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

Sign in / Sign up

Export Citation Format

Share Document