scholarly journals Bias voltage and temperature dependence of hot electron magnetotransport

2002 ◽  
Vol 65 (13) ◽  
Author(s):  
Jisang Hong
Keyword(s):  
Temperature Dependence ◽  
Bias Voltage ◽  
Hot Electron

Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

scholarly journals Temperature dependence of the threshold electric field in a hot electron VCSEL (Invited Paper)

2005 ◽  
Author(s):  
Ali Serpenguzel ◽  
Naci Balkan ◽  
Ayse Erol ◽  
M. Cetin Arikan ◽  
John Roberts
Keyword(s):  
Electric Field ◽  
Temperature Dependence ◽  
Hot Electron

Temperature dependence of hot-electron degradation in bipolar transistors

1993 ◽  
Vol 40 (9) ◽  
pp. 1669-1674 ◽  
Author(s):  
C.-J. Huang ◽  
T.A. Grotjohn ◽  
C.J. Sun ◽  
D.K. Reinhard ◽  
C.-C.W. Yu
Keyword(s):  
Temperature Dependence ◽  
Bipolar Transistors ◽  
Hot Electron
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