Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

scholarly journals Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
Jack Jia-Sheng Huang ◽  
H. S. Chang ◽  
Yu-Heng Jan ◽  
C. J. Ni ◽  
H. S. Chen ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Breakdown Voltage ◽  
Dark Current ◽  
High Speed ◽  
Impact Ionization ◽  
Low Noise ◽  
Bandgap Energy ◽  
Avalanche Breakdown ◽  
Recombination Mechanism ◽  
Avalanche Breakdown Voltage

Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. In this work, we study the temperature dependence of the breakdown voltage and dark current of the mesa-type APD over a wide temperature range of 20–145°C. We institute an empirical model based on impact ionization processes to account for the experimental data. It is shown that highly stable breakdown characteristics of mesa-type APD can be attained with the optimization of the multiplication layer design. We have achieved excellent stability of avalanche breakdown voltage with a temperature coefficient of 0.017 V/°C. The temperature dependence of dark current is attributed to generation-recombination mechanism. The bandgap energy is estimated to be about 0.71 eV based on the temperature variation of dark current, in good agreement with the value for InGaAs.

Studies on the Temperature Stability of Pure and Doped Triglycine Sulphate Crystals Using TGA/DTA

2020 ◽  
Vol 10 (3) ◽  
pp. 206-212
Author(s):  
Vijeesh Padmanabhan ◽  
Maneesha P. Madhu ◽  
Supriya M. Hariharan
Keyword(s):  
Thermal Analysis ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Temperature Stability ◽  
Bandgap Energy ◽  
Dsc Analysis ◽  
Slow Cooling ◽  
As Doping ◽  
Similar Dependence ◽  
Temperature Ranges

Aim: To study the temperature stability of TGS doped with ZnSO4, CdCl2, BaCl2, and compare it with that of pure TGS. Objectives: Synthesizing pure and doped TGS and studying their temperature dependence using TGA, DTA, and DSC analysis. Methods: Slow cooling solution growth was used to grow single crystals of pure and doped TGS. The TGA, DTA and DSC analysis was conducted for determining the temperature stability. Results: The thermal analysis of pure and doped TGS shows that the doped samples show a similar dependence on temperature as pure TGS. The temperature of decomposition of pure and doped samples (BTGS, ZTGS, CdTGS) was 226.60°C, 228.38°C, 229.13°C, and 239.13°C respectively. The melting onset of these samples was 214.51°C, 216.04°C, 217.69°C and 216.04°C respectively. Conclusion: The study shows that doping TGS with the above three described materials did not alter their temperature stability considerably. It is a good result as doping TGS, for varying its characteristics like absorbance, reflectance, bandgap energy, etc., which did not alter its temperature stability. Therefore, TGS doped with the above three dopants can be used at the same temperature ranges as of pure TGS but with much-improved efficiency.

scholarly journals Temperature dependence of impact ionization in GaAs

2003 ◽  
Vol 50 (10) ◽  
pp. 2027-2031 ◽  
Author(s):  
C. Groves ◽  
R. Ghin ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization

scholarly journals Comprehensive Analytical Modelling of an Absolute pH Sensor

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 5190
Author(s):  
Cristina Medina-Bailon ◽  
Naveen Kumar ◽  
Rakshita Pritam Singh Dhar ◽  
Ilina Todorova ◽  
Damien Lenoble ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Numerical Experiments ◽  
Ph Sensor ◽  
Hafnium Dioxide ◽  
Matlab Code ◽  
Oxide Degradation ◽  
Depletion Width ◽  
Ion Activity ◽  
The Absolute ◽  
The Impact

In this work, we present a comprehensive analytical model and results for an absolute pH sensor. Our work aims to address critical scientific issues such as: (1) the impact of the oxide degradation (sensing interface deterioration) on the sensor’s performance and (2) how to achieve a measurement of the absolute ion activity. The methods described here are based on analytical equations which we have derived and implemented in MATLAB code to execute the numerical experiments. The main results of our work show that the depletion width of the sensors is strongly influenced by the pH and the variations of the same depletion width as a function of the pH is significantly smaller for hafnium dioxide in comparison to silicon dioxide. We propose a method to determine the absolute pH using a dual capacitance system, which can be mapped to unequivocally determine the acidity. We compare the impact of degradation in two materials: SiO2 and HfO2, and we illustrate the acidity determination with the functioning of a dual device with SiO2.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Building in Reliability Through a 100x Reduction in Mobile Ions in a 0.8 μm BiCMOS Process

1996 ◽  
Vol 428 ◽  
Author(s):  
Larry Anderson ◽  
Suketu Parikh ◽  
Samuel Nagalingam
Keyword(s):  
Ammonium Fluoride ◽  
Oxide Thickness ◽  
Hot Electron ◽  
Data Retention ◽  
Voltage Sweep ◽  
Boron Doped ◽  
Gate Oxide Thickness ◽  
Bicmos Process ◽  
Scientists And Engineers ◽  
Mobile Ions

AbstractThe reduction of mobile ions--mainly Na+, but also K+, H+ and Li+, is very critical as our gate oxide thickness and Leff decreases. Hot electron induced hydrogen compensation of boron doped silicon changes the PMOS Leff and NPN BVebo. This paper shows how to reduce Na+ by 100X, through the use of Triangular Voltage Sweep (TVS). This paper is designed to give scientists and engineers a case history where we reduced these levels from 1012 to 1010 mobile ions/cm2 in our 0.8μm BiCMOS process. This was accomplished by adding Ammonium Fluoride mixture dips at appropriate steps. For fast feedback, we can non-destructively measure Na, K, and H within 10 minutes of completing phororesist removal at any of the metallization steps using TVS. In addition to BiCMOS, TVS measure is a power tool in Nonvolatile Memories for predicting in-line data retention, when data retention is associated with charge gain.

Temperature dependence of electron impact ionization in In0.53Ga0.47As

2004 ◽  
Vol 84 (13) ◽  
pp. 2322-2324 ◽  
Author(s):  
C. H. Tan ◽  
G. J. Rees ◽  
P. A. Houston ◽  
J. S. Ng ◽  
W. K. Ng ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electron Impact ◽  
Impact Ionization ◽  
Electron Impact Ionization
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