Electrical trimming of ion-beam-sputtered polysilicon resistors by high current pulses

The High Current Experiment (HCX) is being assembled at Lawrence Berkeley National Laboratory as part of the U.S. program to explore heavy ion beam transport at a scale representative of the low-energy end of an induction linac driver for fusion energy production. The primary mission of this experiment is to investigate aperture fill factors acceptable for the transport of space-charge dominated heavy ion beams at high space-charge intensity (line-charge density ∼ 0.2 μC/m) over long pulse durations (>4 μs). This machine will test transport issues at a driver-relevant scale resulting from nonlinear space-charge effects and collective modes, beam centroid alignment and beam steering, matching, image charges, halo, lost-particle induced electron effects, and longitudinal bunch control. We present the first experimental results carried out with the coasting K+ ion beam transported through the first 10 electrostatic transport quadrupoles and associated diagnostics. Later phases of the experiment will include more electrostatic lattice periods to allow more sensitive tests of emittance growth, and also magnetic quadrupoles to explore similar issues in magnetic channels with a full driver scale beam.

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Charge dissipation and self focusing limit in high current density ion beam transport through a micro glass capillary

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aaef4b ◽

2018 ◽

Vol 52 (5) ◽

pp. 055205 ◽

Cited By ~ 4

Author(s):

Sanjeev Kumar Maurya ◽

Sushanta Barman ◽

Samit Paul ◽

Sudeep Bhattacharjee

Keyword(s):

Current Density ◽

High Current Density ◽

Ion Beam ◽

High Current ◽

Beam Transport ◽

Glass Capillary ◽

Self Focusing

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In-Situ Control of Wafer Charge Neutralization During High Current Ion Implants

MRS Proceedings ◽

10.1557/proc-316-633 ◽

1993 ◽

Vol 316 ◽

Author(s):

E.N. Shauly ◽

E. Koltin ◽

I. Munin ◽

Y. Avrahamov

Keyword(s):

Real Time ◽

Ion Beam ◽

High Yield ◽

Wafer Surface ◽

High Current ◽

Charge Condition ◽

Major Process ◽

Process Issue ◽

Current Monitoring

ABSTRACTIon implantation in semiconductor devices frequently leads to a substantial wafer surface charge build up. Control of this charge during high current implantation is a major process issue, as it may affect the yield and reliability of thin dielectric layers. In addition, the charge build up may affect the ion beam resulting in a non-uniform implant and a reduction in device yield. Control of a specific machine parameter, that will give the charge condition of the ion implanter will enable to neutralize the charge build up.In this study, Disk Current Monitoring (DCM) is shown to be a reliable method for monitoring the Electron Shower (ES) performance in real time. A correlation was found between DCM level and yields, and between DCM level and breakdown voltage, as well as different maintenance activities regarding me ES. A simple 5 steps method is described to achieve a reliable, real time charge monitor, to insure operation within the “High Yield Range”.

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Pulsed high current ion beam processing equipment

Surface and Coatings Technology ◽

10.1016/s0257-8972(96)03079-4 ◽

1997 ◽

Vol 90 (1-2) ◽

pp. 21-28 ◽

Cited By ~ 3

Author(s):

Sergey A. Korenev ◽

Anthony J. Perry

Keyword(s):

Ion Beam ◽

High Current ◽

Processing Equipment

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Thermal simulation of thin-film interconnect failure caused by high current pulses

IEEE Transactions on Electron Devices ◽

10.1109/16.391228 ◽

1995 ◽

Vol 42 (7) ◽

pp. 1386-1388 ◽

Cited By ~ 13

Author(s):

Xiang Gui ◽

K. Dew ◽

M.J. Brett

Keyword(s):

Thin Film ◽

Thermal Simulation ◽

High Current ◽

Current Pulses

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14C AMS Measurements of <100 μG Samples with a High-Current System

Radiocarbon ◽

10.1017/s0033822200018117 ◽

1997 ◽

Vol 40 (1) ◽

pp. 247-253 ◽

Cited By ~ 26

Author(s):

Karl F. Von Reden ◽

Ann P. McNichol ◽

Ann Pearson ◽

Robert J. Schneider

Keyword(s):

Current System ◽

Ion Beam ◽

Beam Current ◽

Small Sample ◽

Small Samples ◽

High Current ◽

Beam Optics ◽

Woods Hole Oceanographic Institution ◽

Factors Affecting ◽

The Past

The NOSAMS facility at Woods Hole Oceanographic Institution has started to develop and apply techniques for measuring very small samples on a standard Tandetron accelerator mass spectrometry (AMS) system with high-current hemispherical Cs sputter ion sources. Over the past year, results on samples ranging from 7 to 160 μg C showed both the feasibility of such analyses and the present limitations on reducing the size of solid carbon samples. One of the main factors affecting the AMS results is the dependence of a number of the beam optics parameters on the extracted ion beam current. The extracted currents range from 0.5 to 10 μA of 12C− for the sample sizes given above. We here discuss the setup of the AMS system and methods for reliable small-sample measurements and give the AMS-related limits to sample size and the measurement uncertainties.

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