In-Situ Control of Wafer Charge Neutralization During High Current Ion Implants

1993 ◽  
Vol 316 ◽  
Author(s):  
E.N. Shauly ◽  
E. Koltin ◽  
I. Munin ◽  
Y. Avrahamov
Keyword(s):  
Real Time ◽  
Ion Beam ◽  
High Yield ◽  
Wafer Surface ◽  
High Current ◽  
Charge Condition ◽  
Major Process ◽  
Process Issue ◽  
Current Monitoring

ABSTRACTIon implantation in semiconductor devices frequently leads to a substantial wafer surface charge build up. Control of this charge during high current implantation is a major process issue, as it may affect the yield and reliability of thin dielectric layers. In addition, the charge build up may affect the ion beam resulting in a non-uniform implant and a reduction in device yield. Control of a specific machine parameter, that will give the charge condition of the ion implanter will enable to neutralize the charge build up.In this study, Disk Current Monitoring (DCM) is shown to be a reliable method for monitoring the Electron Shower (ES) performance in real time. A correlation was found between DCM level and yields, and between DCM level and breakdown voltage, as well as different maintenance activities regarding me ES. A simple 5 steps method is described to achieve a reliable, real time charge monitor, to insure operation within the “High Yield Range”.

Evaluation of an In-Situ Particle Monitoring System on an MxP Plasma Etch Tool

2000 ◽  
Vol 43 (1) ◽  
pp. 21-23
Author(s):  
Jon Carlberg ◽  
Don Hess
Keyword(s):  
Real Time ◽  
Time Frame ◽  
Wafer Surface ◽  
Plasma Etch ◽  
Scan Data ◽  
Surface Scan ◽  
Real Time Information ◽  
Time Information ◽  
Particle Monitoring

Etching is the process where a layer is removed from a wafer surface through openings in a photoresist pattern. To monitor this process, a surface scan was employed. An in-situ particle monitor (ISPM) was installed on a plasma etch tool. The ISPM was incorporated so engineers and technicians could gain real-time information and notification of what is happening inside this tool during processing. Since ISPMs are real-time, they can catch problems as they are occurring. The ISPM detected two major problems on the plasma etch tool within a 3-wk period. The wafer scan data were monitored during this same time frame.

scholarly journals In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

1999 ◽  
Vol 569 ◽  
Author(s):  
V.S. Smentkowskiv ◽  
A. R. Krauss ◽  
O. Auciello ◽  
J. Im ◽  
D.M. Gruen ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Film Growth ◽  
Ion Beam ◽  
Time Of Flight ◽  
Analytical Techniques ◽  
Surface Species ◽  
Ion Scattering ◽  
Growth Processes

ABSTRACTTime-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1–2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is a variant of DRS capable of isotopic resolution for all surface species - including H and He. The advantages and limitations of each of these techniques will be discussed.The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dual functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.

INFLUENCE OF OXYGEN IMPURITIES ON ION BEAM INDUCED INTERDIFFUSION IN THIN Au-Al MULTILAYERS DEPOSITED ON DIFFERENT SUBSTRATES

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1370-1381
Author(s):  
ANDREAS MARKWITZ ◽  
GUY DEMORTIER
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Depth Resolution ◽  
Thin Layers ◽  
High Current ◽  
Beam Spot ◽  
Elastic Backscattering ◽  
Oxygen Impurities ◽  
Beam Spot Diameter

Au-Al interdiffusion processes in thin layers deposited on various substrates were investigated with RBS during high current ion irradiation. The atomic movements were identified simultaneously (in-situ RBS) with a depth resolution of a few nanometers. It was observed that heating of the specimens due to ion irradiation was the most evident mechanism inducing atom transport. After only 8 min of irradiation with 300 nA 2.0 MeV 4 He + ions (beam spot diameter 0.5 mm), two Au-Al layers (total thickness 600 nm) deposited on glassy carbon or gold were found to be fully interdiffused. In contrast to that, no significant interdiffusion was measured for the same systems deposited on wafer silicon and polished aluminium substrates. To understand this behaviour, depth distributions of oxygen impurities were measured using enhanced elastic backscattering spectroscopy (σ ≈ 102 σ R with 7.6 MeV 4 He ions.

scholarly journals In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique

1994 ◽  
Vol 341 ◽  
Author(s):  
Orlando Auciello ◽  
A. R. Krauss ◽  
Y. Lin ◽  
R. P. H. Chang ◽  
D. M. Gruen
Keyword(s):  
Real Time ◽  
Surface Segregation ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Scattering ◽  
Real Time Analysis ◽  
Analysis Technique ◽  
Conductive Oxide ◽  
New Time

AbstractA new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.

In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

1999 ◽  
Vol 569 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Ion Beam ◽  
Oxygen Deficiency ◽  
Ion Beam Sputtering ◽  
Optical Absorption Peak ◽  
Beam Sputtering ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTThe optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

Real-time observation of ion beam eroded silicon surfaces: Ripple propagation, coherence and noise effects in surface erosion

2004 ◽  
Vol 849 ◽  
Author(s):  
S. Habenicht ◽  
K. P. Lieb
Keyword(s):  
Real Time ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Continuum Theory ◽  
Silicon Surfaces ◽  
Surface Erosion ◽  
Erosion Process ◽  
Noise Effects ◽  
Time Observation

AbstractThe evolution of ion beam eroded Silicon surfaces was measured in real-time by combining focused ion beam technology with scanning electron microscopy. By detecting the secondary electrons emitted during implantation the surface was monitored in-situ during the erosion process of a Gallium focused ion beam. Repetitive scanning of the ion beam over the surface effectuates a coherent erosion of the exposed surface area, with the continuum theory of erosion as the ergodic limitation. Surface ripple as proposed by linear erosion theory were observed for oblique incidence of the ion beam and their propagation with progressing erosion time as well as their velocity dispersion were monitored. The ripple wavelength has been observed to increase with the erosion time and the value of the ripple velocity was observed to agree qualitatively with the results of Monte-Carlo simulations of the erosion process.Noise effects acompanying the erosion process are found to be responsible for the reorientation of the ripples when the orientation of the ion beam onto the surface is varied. This mechanism is discussed to stimulate further efforts in this field of surface erosion.

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