scholarly journals 14C AMS Measurements of <100 μG Samples with a High-Current System

Radiocarbon ◽  
1997 ◽  
Vol 40 (1) ◽  
pp. 247-253 ◽  
Author(s):  
Karl F. Von Reden ◽  
Ann P. McNichol ◽  
Ann Pearson ◽  
Robert J. Schneider

The NOSAMS facility at Woods Hole Oceanographic Institution has started to develop and apply techniques for measuring very small samples on a standard Tandetron accelerator mass spectrometry (AMS) system with high-current hemispherical Cs sputter ion sources. Over the past year, results on samples ranging from 7 to 160 μg C showed both the feasibility of such analyses and the present limitations on reducing the size of solid carbon samples. One of the main factors affecting the AMS results is the dependence of a number of the beam optics parameters on the extracted ion beam current. The extracted currents range from 0.5 to 10 μA of 12C− for the sample sizes given above. We here discuss the setup of the AMS system and methods for reliable small-sample measurements and give the AMS-related limits to sample size and the measurement uncertainties.

Radiocarbon ◽  
2016 ◽  
Vol 58 (1) ◽  
pp. 89-97 ◽  
Author(s):  
E Freeman ◽  
L C Skinner ◽  
R Reimer ◽  
A Scrivner ◽  
S Fallon

AbstractA new radiocarbon preparation facility was set up in 2010 at the Godwin Laboratory for Palaeoclimate Research, at the University of Cambridge. Samples are graphitized via hydrogen reduction on an iron powder catalyst before being sent to the Chrono Centre, Belfast, or the Australian National University for accelerator mass spectrometry (AMS) analysis. The experimental setup and procedure have recently been developed to investigate the potential for running small samples of foraminiferal carbonate. By analyzing background values of samples ranging from 0.04 to 0.6 mg C along with similar sized secondary standards, the setup and experimental procedures were optimized for small samples. “Background” modern 14C contamination has been minimized through careful selection of iron powder, and graphitization has been optimized through the use of “small volume” reactors, allowing samples containing as little as 0.08 mg C to be graphitized and accurately dated. Graphitization efficiency/fractionation is found not to be the main limitation on the analysis of samples smaller than 0.07 mg C, which rather depends primarily on AMS ion beam optics, suggesting further improvements in small sample analysis might yet be achieved with our methodology.


Radiocarbon ◽  
2010 ◽  
Vol 52 (2) ◽  
pp. 310-318 ◽  
Author(s):  
Yusuke Yokoyama ◽  
Mamito Koizumi ◽  
Hiroyuki Matsuzaki ◽  
Yosuke Miyairi ◽  
Naohiko Ohkouchi

We have developed accelerator mass spectrometry (AMS) measurement techniques for ultra small-size samples ranging from 0.01 to 0.10 mg C with a new type of MC-SNICS ion source system. We can generate 4 times higher ion beam current intensity for ultra-small samples by optimization of graphite position in the target holder with the new ionizer geometry. CO2 gas graphitized in the newly developed vacuum line is pressed to a depth of 1.5 mm from the front of the target holder. This is much deeper than the previous position at 0.35 mm depth. We measured 12C4+ beam currents generated by small standards and ion beam currents (15–30 μA) from the targets in optimized position, lasting 20 min for 0.01 mg C and 65 min for 0.10 mg C. We observed that the measured 14C/12C ratios are unaffected by the difference of ion beam currents ranging from 5 to 30 μA, enabling measurement of ultra-small samples with high precision. Examination of the background samples revealed 1.1 μg of modern and 1 μg of dead carbon contaminations during target graphite preparation. We make corrections for the contamination from both the modern and background components. Reduction of the contamination is necessary for conducting more accurate measurement.


2013 ◽  
Vol 1575 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Takuya Hamaguchi ◽  
Hiromichi Ryuto ◽  
Gikan H Takaoka

ABSTRACTIonic liquid (IL) ion sources with different emitter tip materials and tip numbers were developed and examined on ion beam characteristics with respect to its ILs wettability. As a result of ion current measurements, the most stable emission current was obtained for the graphite emitter tip and the ion current increased with increase of the tip number. The results indicate that the emitter wettability corresponding to the supplying flow rate and the number of emission site play an important role to stabilize and increase the beam current.


2013 ◽  
Vol 63 (7) ◽  
pp. 1399-1402 ◽  
Author(s):  
Chan-Young Lee ◽  
Bom-Sok Kim ◽  
Hyuk Jun Choi ◽  
Jas-Sang Lee

2003 ◽  
Vol 21 (4) ◽  
pp. 627-632 ◽  
Author(s):  
U. RATZINGER ◽  
H. LIEBERMANN ◽  
O. MEUSEL ◽  
H. PODLECH ◽  
R. TIEDE ◽  
...  

The actual situation with respect to the use of an RF linac driver for heavy ion inertial fusion (HIF) is discussed. At present, there is no high current heavy ion linac under construction. However, in the course of linac projects for e−, p, d, or highly charged ions several developments were made, which may have some impact on the design of a HIF driver. Medium- and low-β superconducting structures suited for pulsed high current beam operation are actually designed and investigated at several laboratories. A superconducting 40 MeV, 125 mA cw linac for deuteron acceleration is designed for the Inertial Fusion Material Irradiation Facility (IFMIF). The Institute for Applied Physics (IAP) is developing a superconducting 350-MHz, 19-cell prototype CH-cavity for β = 0.1. The prototype cavity will be ready for tests in 2004. A superconducting main HIF driver linac would considerably reduce the power losses. Moreover, it would allow for an efficient linac operation at a higher duty factor.The 1.4-AMeV room-temperature High Current Injector HSI at Gesellschaft für Schwerionenforschung (GSI) has been in routine operation for more than 2 years now. With a mass-to-charge ratio of up to 65, a current limit of 15 mA for U4+, and an energy range from 2.2 AkeV up to 1.4 AMeV, this linac is suited to gain useful experience on the way toward the design of a HIF RF driver. The status and technical improvements of that A/q ≤ 65, 91-MV linac are reported. Beam dynamics calculations for Bi1+-beams show that powerful focusing elements at the linac front end are the bottleneck with respect to a further increase in beam current. Besides superconducting and pulsed wire quadrupoles, the potential of the Gabor-plasma lenses is investigated.


Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.


1994 ◽  
Vol 33 (02) ◽  
pp. 180-186 ◽  
Author(s):  
H. Brenner ◽  
O. Gefeller

Abstract:The traditional concept of describing the validity of a diagnostic test neglects the presence of chance agreement between test result and true (disease) status. Sensitivity and specificity, as the fundamental measures of validity, can thus only be considered in conjunction with each other to provide an appropriate basis for the evaluation of the capacity of the test to discriminate truly diseased from truly undiseased subjects. In this paper, chance-corrected analogues of sensitivity and specificity are presented as supplemental measures of validity, which pay attention to the problem of chance agreement and offer the opportunity to be interpreted separately. While recent proposals of chance-correction techniques, suggested by several authors in this context, lead to measures which are dependent on disease prevalence, our method does not share this major disadvantage. We discuss the extension of the conventional ROC-curve approach to chance-corrected measures of sensitivity and specificity. Furthermore, point and asymptotic interval estimates of the parameters of interest are derived under different sampling frameworks for validation studies. The small sample behavior of the estimates is investigated in a simulation study, leading to a logarithmic modification of the interval estimate in order to hold the nominal confidence level for small samples.


Author(s):  
Valery Ray

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.


Sign in / Sign up

Export Citation Format

Share Document