AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

1990 ◽  
Vol 37 (10) ◽  
pp. 2171-2175 ◽  
Author(s):  
P.P. Ruden ◽  
M. Shur ◽  
A.I. Akinwande ◽  
J.C. Nohava ◽  
D.E. Grider ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

Quantum-well doped p-channel AlGaAs/GaAs/sub 0.85/Sb/sub 0.15//GaAs heterostructure field-effect transistors

1991 ◽  
Vol 38 (3) ◽  
pp. 672-674 ◽  
Author(s):  
Y.H. Byun ◽  
F.L. Schuermeyer ◽  
K. Lee ◽  
M. Shur ◽  
P. Cook ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2085-2089 ◽  
Author(s):  
Rong Tay Hsu ◽  
Wei Chou Hsu ◽  
Jiann Shiun Wang ◽  
Ming Jer Kao ◽  
Yu Huei Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Strained Quantum Well

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

1996 ◽  
Vol 17 (7) ◽  
pp. 325-327 ◽  
Author(s):  
M.A. Khan ◽  
Q. Chen ◽  
J.W. Yang ◽  
M.S. Shur ◽  
B.T. Dermott ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors
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