Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiodes

2001 ◽  
Vol 48 (6) ◽  
pp. 1075-1081 ◽  
Author(s):  
Neng-Fu Shih
Keyword(s):  
Noise Analysis ◽  
Avalanche Photodiodes ◽  
Excess Noise

Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end

2006 ◽  
Vol 17 (7) ◽  
pp. 1941-1946 ◽  
Author(s):  
K S Lau ◽  
C H Tan ◽  
B K Ng ◽  
K F Li ◽  
R C Tozer ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Measurement ◽  
Excess Noise ◽  
Transimpedance Amplifier ◽  
Front End

Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

2018 ◽  
Vol 57 (04) ◽  
pp. 1 ◽  
Author(s):  
Tomislav Jukić ◽  
Paul Brandl ◽  
Horst Zimmermann
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise

Experimental Studies of Excess Noise Sources in Concrete Based Materials as a Limiting Factor for Electromagnetic Emission Measurement

2013 ◽  
Vol 592-593 ◽  
pp. 529-532
Author(s):  
Robert Macků ◽  
Pavel Koktavý ◽  
Tomas Trčka ◽  
Vladimir Holcman
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Experimental Studies ◽  
Electromagnetic Emission ◽  
Dielectric Materials ◽  
Excess Noise ◽  
Limiting Factor ◽  
Emission Measurement ◽  
Noise Sources ◽  
Geometrical Properties

This paper deals with excess noise sources in dielectric materials. We focus especially on the concrete samples that are frequently tested to ensure information about the reliability and level of degradation. Nevertheless, the testing methods are limited mainly by the proper contact creation, signal detection and noise defined sensitivity. Our efforts are directed to the noise properties assessment. It turns out that the Johnson-Nyquist noise and the 1/f (flicker) noise are generated in the different regions with the different response to the internal or external electric field. In addition the noise analysis is affected by the internal polarization phenomena and the material residual humidity. This issue in connection with the sample geometrical properties and the dielectric noise measurement methodology take part in this paper.

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes

2010 ◽  
Vol 645-648 ◽  
pp. 1081-1084
Author(s):  
James E. Green ◽  
W.S. Loh ◽  
J.P.R. David ◽  
R.C. Tozer ◽  
Stanislav I. Soloviev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Avalanche Photodiodes ◽  
Depletion Region ◽  
Low Noise ◽  
Excess Noise ◽  
Local Model ◽  
Prior Work ◽  
Absorption Layer ◽  
Impact Ionisation ◽  
Dark Currents

We report photomultiplication, M, and excess noise, F, measurements at 244nm and 325nm in two 4H-SiC separate absorption and multiplication region avalanche photodiodes (SAM-APDs). Sample A is a 4 x 4 array of 16 SAM-APDs. This structure possesses a relatively thin absorption layer resulting in more mixed injection, and consequently higher noise than sample B. The absorption layer of sample B does not deplete, so 244nm light results in >99% absorption outside the depletion region resulting in very low excess noise. Both structures exhibit very low dark currents and abrupt uniform breakdown at 194V and 624V for samples A and B respectively. Excess noise is treated using a local model [1]. The effective ratio of impact ionisation coefficients (keff) is approximately 0.007, this indicates a significant reduction in the electron impact ionisation coefficient, α, compared to prior work [2-5]. We conclude that the value of α will require modification if thick silicon carbide structures are to fit the local model for multiplication and excess noise.

Excess Noise in Amorphous Selenium Avalanche Photodiodes

1991 ◽  
Vol 30 (Part 2, No. 6B) ◽  
pp. L1071-L1074 ◽  
Author(s):  
Tetsuya Ohshima ◽  
Kazutaka Tsuji ◽  
Kenji Sameshima ◽  
Tadaaki Hirai ◽  
Keiichi Shidara ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Selenium ◽  
Excess Noise
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